US 11,723,225 B2
Imaging device and imaging system
Takeyoshi Tokuhara, Osaka (JP); Sanshiro Shishido, Osaka (JP); Yasuo Miyake, Osaka (JP); and Shinichi Machida, Osaka (JP)
Assigned to PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD., Osaka (JP)
Filed by Panasonic Intellectual Property Management Co., Ltd., Osaka (JP)
Filed on Dec. 15, 2022, as Appl. No. 18/66,675.
Application 18/066,675 is a continuation of application No. 17/083,376, filed on Oct. 29, 2020, granted, now 11,563,057.
Application 17/083,376 is a continuation of application No. PCT/JP2019/041830, filed on Oct. 25, 2019.
Claims priority of application No. 2018-216499 (JP), filed on Nov. 19, 2018.
Prior Publication US 2023/0133421 A1, May 4, 2023
Int. Cl. H10K 39/32 (2023.01); H01L 27/146 (2006.01)
CPC H10K 39/32 (2023.02) [H01L 27/146 (2013.01); H01L 27/14669 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An imaging device comprising:
a semiconductor substrate including a first surface that receives light from outside, and a second surface opposite to the first surface;
a first transistor located on the second surface; and
a photoelectric converter that faces the second surface and that receives light transmitted through the semiconductor substrate, wherein
the semiconductor substrate is a silicon substrate or a silicon compound substrate,
the photoelectric converter includes
a first electrode electrically connected to the first transistor,
a second electrode, and
a photoelectric conversion layer that is located between the first electrode and the second electrode and that contains a material which absorbs light having a first wavelength longer than or equal to 1.1 μm, and
the material has a quantum nanostructure.