US 11,723,223 B2
Low-noise integrated post-processed photodiode
Robert Daniel McGrath, Lexington, MA (US)
Assigned to BAE Systems Imaging Solutions Inc., San Jose, CA (US)
Filed by BAE Systems Imaging Solutions Inc., San Jose, CA (US)
Filed on Jan. 26, 2021, as Appl. No. 17/158,367.
Application 17/158,367 is a division of application No. 16/198,247, filed on Nov. 21, 2018, granted, now 10,937,835.
Prior Publication US 2021/0175288 A1, Jun. 10, 2021
Int. Cl. H01L 27/146 (2006.01); H10K 39/32 (2023.01); H10K 30/82 (2023.01)
CPC H10K 39/32 (2023.02) [H01L 27/14612 (2013.01); H01L 27/14636 (2013.01); H01L 27/14643 (2013.01); H01L 27/1463 (2013.01); H01L 27/14689 (2013.01); H10K 30/82 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A sensor, said sensor comprising:
an array of pixels;
at least one pixel in said array comprising a photodiode structure built on top of an integrated circuit generating a charge;
said integrated circuit comprising at least one semiconductor material and at least one interconnect layer;
said at least one interconnect layer comprising an interconnect to facilitate said charge flowing into a collection node disposed in said semiconductor material;
said interconnect being in contact with a doped contact diffusion disposed within said collection node;
a transfer transistor disposed between said collection node and a conversion node, said conversion node coupled to an active transistor;
each said at least one pixel having a reset configured to reset said conversion node;
at least one bias circuit providing bias to said array;
at least one clock circuit providing clocking to said array; and
at least one signal chain circuit detecting a signal output by at least one pixel of said array.