US 11,723,205 B2
Semiconductor memory device and manufacturing method thereof
Sung Wook Jung, Icheon-si (KR)
Assigned to SK hynix Inc., Icheon-si (KR)
Filed by SK hynix Inc., Icheon-si (KR)
Filed on Jun. 30, 2022, as Appl. No. 17/854,803.
Application 17/854,803 is a continuation of application No. 17/015,614, filed on Sep. 9, 2020, granted, now 11,417,680.
Claims priority of application No. 10-2020-0042389 (KR), filed on Apr. 7, 2020.
Prior Publication US 2022/0336495 A1, Oct. 20, 2022
Int. Cl. H10B 43/27 (2023.01); H01L 23/535 (2006.01); H10B 41/10 (2023.01); H10B 41/27 (2023.01); H10B 41/35 (2023.01); H10B 41/41 (2023.01); H10B 41/50 (2023.01); H10B 43/10 (2023.01); H10B 43/35 (2023.01); H10B 43/40 (2023.01); H10B 43/50 (2023.01); H10B 63/00 (2023.01); H10N 70/20 (2023.01)
CPC H10B 43/27 (2023.02) [H01L 23/535 (2013.01); H10B 41/10 (2023.02); H10B 41/27 (2023.02); H10B 41/35 (2023.02); H10B 41/41 (2023.02); H10B 41/50 (2023.02); H10B 43/10 (2023.02); H10B 43/35 (2023.02); H10B 43/40 (2023.02); H10B 43/50 (2023.02); H10B 63/34 (2023.02); H10B 63/845 (2023.02); H10N 70/231 (2023.02)] 6 Claims
OG exemplary drawing
 
1. A method of manufacturing a semiconductor memory device, the method comprising:
forming a lower stack structure on a substrate with a first region and a second region;
forming a first slit and a lower contact hole that penetrate the lower stack structure, the first slit overlapping with the first region, the lower contact hole overlapping with the second region;
forming an isolation insulating layer that fills the first slit;
forming a first sidewall insulating layer that covers a sidewall of the lower contact hole during the forming of the isolation insulating layer;
forming a first contact pattern on the first sidewall insulating layer to fill the lower contact hole;
forming an upper stack structure on the lower stack structure, the upper stack structure extending to cover the isolation insulating layer and the first contact pattern;
forming channel structures that penetrates the upper stack structure and the lower stack structure, the channel structures overlapping with the first region; and
forming a second contact pattern that penetrates the upper stack structure, overlapping with the second region, the second contact pattern being connected to the first contact pattern.