US 11,723,199 B2
Protective liner layers in 3D memory structure
Tsu Ching Yang, Taipei (TW); Sheng-Chih Lai, Hsinchu County (TW); Yu-Wei Jiang, Hsinchu (TW); Kuo-Chang Chiang, Hsinchu (TW); Hung-Chang Sun, Kaohsiung (TW); Chen-Jun Wu, Hsinchu (TW); Feng-Cheng Yang, Zhudong Township (TW); and Chung-Te Lin, Tainan (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Mar. 3, 2021, as Appl. No. 17/190,735.
Prior Publication US 2022/0285384 A1, Sep. 8, 2022
Int. Cl. H10B 51/20 (2023.01); H10B 51/30 (2023.01); H10B 43/20 (2023.01); H10B 43/30 (2023.01)
CPC H10B 43/20 (2023.02) [H10B 43/30 (2023.02); H10B 51/20 (2023.02); H10B 51/30 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A memory device, comprising:
a substrate;
a stack of gate electrode layers, wherein the stack of gate electrode layers is arranged over the substrate;
interconnect dielectric layers arranged above and below each gate electrode layer of the stack of gate electrode layers;
a first memory cell arranged over the substrate and comprising:
a first source/drain conductive line extending vertically through the stack of gate electrode layers;
a second source/drain conductive line extending vertically through the stack of gate electrode layers;
a first barrier structure arranged between a first side of the first source/drain conductive line and a first side of the second source/drain conductive line;
a first protective liner layer arranged directly between the first side of the first source/drain conductive line and the first barrier structure and arranged directly between the first side of the second source/drain conductive line and the first barrier structure;
a channel layer arranged on outermost sidewalls of the first protective liner layer and extending between the first source/drain conductive line and the second source/drain conductive line;
a memory layer arranged on outermost sidewalls of the channel layer;
a second barrier structure on a second side opposite to the first side of the first source/drain conductive line; and
a second protective liner layer arranged directly between the second barrier structure and the second side of the first source/drain conductive line.