US 11,723,198 B2
Method for manufacturing semiconductor device
Hironobu Sato, Yokkaichi Mie (JP)
Assigned to Kioxia Corporation, Tokyo (JP)
Filed by KIOXIA CORPORATION, Tokyo (JP)
Filed on Mar. 2, 2021, as Appl. No. 17/189,952.
Claims priority of application No. 2020-156082 (JP), filed on Sep. 17, 2020.
Prior Publication US 2022/0085049 A1, Mar. 17, 2022
Int. Cl. H10B 43/20 (2023.01); H10B 41/10 (2023.01); H10B 41/20 (2023.01); H10B 41/35 (2023.01); H10B 43/10 (2023.01); H10B 43/35 (2023.01)
CPC H10B 43/20 (2023.02) [H10B 41/10 (2023.02); H10B 41/20 (2023.02); H10B 41/35 (2023.02); H10B 43/10 (2023.02); H10B 43/35 (2023.02)] 10 Claims
OG exemplary drawing
 
1. A method for manufacturing a semiconductor device, comprising:
alternately stacking a first film and a second film on an object to form a multilayer film stack;
forming a stacked body and a recess by removing portions of the multilayer film stack;
forming a dielectric layer by applying a composite material to the recess such that the recess is filled with the dielectric layer, the composite material comprising an inorganic material and an organic material;
exposing the dielectric layer to an oxidizing gas to oxidize the inorganic material and to remove at least part of the organic material from the dielectric layer.