CPC H10B 41/27 (2023.02) [H10B 41/10 (2023.02); H10B 41/35 (2023.02); H10B 43/10 (2023.02); H10B 43/27 (2023.02); H10B 43/35 (2023.02)] | 13 Claims |
1. A microelectronic device, comprising:
a stack structure comprising a vertically alternating sequence of insulative structures and conductive structures arranged in tiers;
at least one slit region dividing the stack structure into blocks, each block comprising an array of active pillars; and
along the at least one slit region, a horizontally alternating sequence of slit structure segments and support pillar structures, the slit structure segments and the support pillar structures each extending vertically through the stack structure,
wherein, laterally adjacent the support pillar structures, the conductive structures of the stack structure are laterally recessed relative to the insulative structures of the stack structure.
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