US 11,723,196 B2
Microelectronic devices with support pillars spaced along a slit region between pillar array blocks, and related systems
Anilkumar Chandolu, Boise, ID (US); and Indra V. Chary, Boise, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Oct. 5, 2020, as Appl. No. 17/63,101.
Prior Publication US 2022/0108998 A1, Apr. 7, 2022
Int. Cl. H01L 27/11582 (2017.01); H10B 41/27 (2023.01); H10B 41/10 (2023.01); H10B 41/35 (2023.01); H10B 43/10 (2023.01); H10B 43/27 (2023.01); H10B 43/35 (2023.01)
CPC H10B 41/27 (2023.02) [H10B 41/10 (2023.02); H10B 41/35 (2023.02); H10B 43/10 (2023.02); H10B 43/27 (2023.02); H10B 43/35 (2023.02)] 13 Claims
OG exemplary drawing
 
1. A microelectronic device, comprising:
a stack structure comprising a vertically alternating sequence of insulative structures and conductive structures arranged in tiers;
at least one slit region dividing the stack structure into blocks, each block comprising an array of active pillars; and
along the at least one slit region, a horizontally alternating sequence of slit structure segments and support pillar structures, the slit structure segments and the support pillar structures each extending vertically through the stack structure,
wherein, laterally adjacent the support pillar structures, the conductive structures of the stack structure are laterally recessed relative to the insulative structures of the stack structure.