CPC H04N 25/68 (2023.01) [H04N 25/713 (2023.01); H04N 17/002 (2013.01)] | 20 Claims |
1. An imaging device comprising:
a pixel disposed in a first chip, the pixel including:
a first photoelectric conversion element;
a first transfer transistor, wherein a first terminal of the first transfer transistor is coupled to the first photoelectric conversion element;
a first amplifier transistor, wherein a gate of the first amplifier transistor is coupled to a second terminal of the first transfer transistor and wherein a first terminal of the first amplifier transistor is coupled to a power line; and
a first reset transistor, wherein a first terminal of the first reset transistor is coupled to the second terminal of the first transfer transistor and wherein a second terminal of the first reset transistor is coupled to the power line; and
a first select transistor, wherein a first terminal of the first select transistor is coupled to a second terminal of the first amplifier transistor;
a test signal generator disposed in the first chip, the test signal generator comprising:
a second amplifier transistor, wherein a gate of the second amplifier transistor is coupled to a test voltage generation circuit and wherein a first terminal of the second amplifier transistor is coupled to the power line; and
a second select transistor, wherein a first terminal of the second select transistor is coupled to a second terminal of the second amplifier transistor;
a selection control signal line coupled to a gate of the first select transistor in the pixel and a gate of the second select transistor in the test signal generator; and
a vertical scanning unit disposed in a second chip, the vertical scanning unit being coupled to the selection control signal line via a first connection terminal.
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