US 11,722,794 B2
Image sensor with multi-gain readout
Manuel H. Innocent, Wezemaal (BE); and Jeffery Beck, Philomath, OR (US)
Assigned to SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Scottsdale, AZ (US)
Filed by SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Phoenix, AZ (US)
Filed on Jul. 9, 2021, as Appl. No. 17/371,381.
Prior Publication US 2023/0008046 A1, Jan. 12, 2023
Int. Cl. H04N 25/59 (2023.01); H04N 25/57 (2023.01); H04N 25/75 (2023.01); H04N 25/585 (2023.01); H04N 25/50 (2023.01)
CPC H04N 25/59 (2023.01) [H04N 25/50 (2023.01); H04N 25/57 (2023.01); H04N 25/585 (2023.01); H04N 25/75 (2023.01)] 20 Claims
OG exemplary drawing
 
1. An image sensor comprising:
an array of image sensor pixels having an image sensor pixel, the image sensor pixel including:
a photodiode;
a floating diffusion region coupled to the photodiode;
a first capacitor for a first conversion gain configuration coupled to the floating diffusion region; and
a second capacitor for a second conversion gain configuration coupled to the floating diffusion region; and
control circuitry coupled to the image sensor pixel and configured to control the image sensor pixel to transfer charge from the photodiode to the floating diffusion region for a third conversion gain configuration at least in part by connecting the floating diffusion region to the second capacitor.