CPC H03H 9/132 (2013.01) [H03H 9/02062 (2013.01); H03H 9/02086 (2013.01); H03H 9/173 (2013.01); H03H 9/175 (2013.01); H03H 9/54 (2013.01); H10N 30/87 (2023.02); H10N 30/883 (2023.02)] | 20 Claims |
1. A bulk acoustic wave (BAW) resonator comprising:
a bottom electrode;
a piezoelectric layer over the bottom electrode;
a top electrode over the piezoelectric layer, the top electrode forming a central region and a border (BO) region that extends about a periphery of the central region, the BO region comprising an outer BO region and an inner BO region that is between the outer BO region and the central region; and
a dielectric spacer layer arranged between the outer BO region and the piezoelectric layer, the dielectric spacer layer being in contact with the piezoelectric layer under the outer BO region.
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