US 11,722,119 B2
Top electrodes and dielectric spacer layers for bulk acoustic wave resonators
Alireza Tajic, Snoqualmie, WA (US); Paul Stokes, Orlando, FL (US); and Robert Aigner, Ocoee, FL (US)
Assigned to Qorvo US, Inc., Greensboro, NC (US)
Filed by Qorvo US, Inc., Greensboro, NC (US)
Filed on Aug. 24, 2022, as Appl. No. 17/821,906.
Application 17/821,906 is a continuation of application No. 16/525,858, filed on Jul. 30, 2019, granted, now 11,502,667.
Claims priority of provisional application 62/792,113, filed on Jan. 14, 2019.
Prior Publication US 2022/0416761 A1, Dec. 29, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H03H 9/13 (2006.01); H03H 9/02 (2006.01); H03H 9/17 (2006.01); H03H 9/54 (2006.01); H10N 30/87 (2023.01); H10N 30/88 (2023.01)
CPC H03H 9/132 (2013.01) [H03H 9/02062 (2013.01); H03H 9/02086 (2013.01); H03H 9/173 (2013.01); H03H 9/175 (2013.01); H03H 9/54 (2013.01); H10N 30/87 (2023.02); H10N 30/883 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A bulk acoustic wave (BAW) resonator comprising:
a bottom electrode;
a piezoelectric layer over the bottom electrode;
a top electrode over the piezoelectric layer, the top electrode forming a central region and a border (BO) region that extends about a periphery of the central region, the BO region comprising an outer BO region and an inner BO region that is between the outer BO region and the central region; and
a dielectric spacer layer arranged between the outer BO region and the piezoelectric layer, the dielectric spacer layer being in contact with the piezoelectric layer under the outer BO region.