US 11,721,954 B2
Vertical cavity surface emitting laser diode (VCSEL) having AlGaAsP layer with compressive strain
Chao-Hsing Huang, Taoyuan (TW); Yu-Chung Chin, Taoyuan (TW); and Van-Truong Dai, Taoyuan (TW)
Assigned to VISUAL PHOTONICS EPITAXY CO., LTD., Taoyuan (TW)
Filed by VISUAL PHOTONICS EPITAXY CO., LTD., Taoyuan (TW)
Filed on Jul. 17, 2020, as Appl. No. 16/931,541.
Claims priority of application No. 108125675 (TW), filed on Jul. 19, 2019.
Prior Publication US 2021/0021104 A1, Jan. 21, 2021
Int. Cl. H01S 5/34 (2006.01); H01S 5/183 (2006.01)
CPC H01S 5/3403 (2013.01) [H01S 5/18361 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A vertical cavity surface emitting laser diode (VCSEL) comprising an AlGaAsP layer with compressive strain, the VCSEL comprising:
a GaAs substrate; a lower distributed Bragg reflector (DBR) layer; a lower spacer layer; an active region; an upper spacer layer; and an upper DBR layer,
wherein the lower DBR layer and the lower spacer layer are disposed above the GaAs substrate and below the active region, and the lower DBR layer comprises a plurality of low refractive index layers and a plurality of high refractive index layers;
wherein the upper DBR layer and the upper spacer layer are disposed above the active region, and the upper DBR layer comprises a plurality of low refractive index layers and a plurality of high refractive index layers;
wherein the low refractive index layer of the upper DBR layer or the lower DBR layer contains Alx1Ga1-x1As1-y1Py1, and wherein at room temperature, a lattice constant of Alx1Ga1-x1As1-y1Py1 is greater than that of the GaAs substrate to lower the compressive strain of the lower DBR layer with respect to the GaAs substrate, wherein 0<x1≤1 and 0<y1≤0.03;
wherein the high refractive index layer of the upper DBR layer or the lower DBR layer comprises GaAs, AlGaAs, or Alx2Ga1-x2As1-y2Py2, and a lattice constant of Alx2Ga1-x2As1-y2Py2 is greater than that of the GaAs substrate at room temperature to prevent the high refractive index layer of Alx2Ga1-x2As1-y2Py2 from generating a tensile strain at room temperature, wherein 0<x2≤1 and 0<y2≤0.015.