US 11,721,794 B2
Method for manufacturing reflective structure
Chia-Hua Lin, Hsinchu (TW); Yao-Wen Chang, Taipei (TW); Chii-Ming Wu, Hsinchu County (TW); Cheng-Yuan Tsai, Hsin-Chu County (TW); Eugene I-Chun Chen, Taipei (TW); and Tzu-Chung Tsai, Hsinchu County (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed on Feb. 18, 2022, as Appl. No. 17/675,365.
Application 17/675,365 is a continuation of application No. 16/732,222, filed on Dec. 31, 2019, granted, now 11,257,997.
Prior Publication US 2022/0173290 A1, Jun. 2, 2022
Int. Cl. H01L 33/60 (2010.01); H01L 33/62 (2010.01); H01L 27/15 (2006.01)
CPC H01L 33/60 (2013.01) [H01L 27/156 (2013.01); H01L 33/62 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for manufacturing a reflective structure, the method comprising:
receiving a metallization structure;
forming a first conductive pad, a second conductive pad, and a third conductive pad over the metallization structure; and
forming a plurality of dielectric stacks over the metallization structure, the forming of the plurality of dielectric stacks comprising:
forming a first dielectric stack over the first conductive pad;
forming a second dielectric stack adjacent to the first dielectric stack, the second dielectric stack covering the second conductive pad; and
forming a third dielectric stack adjacent to the second dielectric stack, the third dielectric stack covering the third conductive pad; wherein the thicknesses of the dielectric stacks are different.