US 11,721,789 B2
Light-emitting diode device and method for manufacturing the same
Jiangbin Zeng, Xiamen (CN); Anhe He, Xiamen (CN); Ling-yuan Hong, Xiamen (CN); Kang-Wei Peng, Xiamen (CN); Su-hui Lin, Xiamen (CN); and Chia-Hung Chang, Xiamen (CN)
Assigned to XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
Filed by XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD., Xiamen (CN)
Filed on Jun. 13, 2022, as Appl. No. 17/806,528.
Application 17/806,528 is a continuation of application No. 17/019,857, filed on Sep. 14, 2020, granted, now 11,393,950.
Application 17/019,857 is a continuation in part of application No. PCT/CN2019/072021, filed on Jan. 16, 2019.
Claims priority of application No. 201810216614.1 (CN), filed on Mar. 16, 2018.
Prior Publication US 2022/0302345 A1, Sep. 22, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 33/22 (2010.01); H01L 33/10 (2010.01); H01L 33/00 (2010.01); H01L 33/38 (2010.01)
CPC H01L 33/22 (2013.01) [H01L 33/005 (2013.01); H01L 33/10 (2013.01); H01L 33/382 (2013.01); H01L 2933/0016 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A light-emitting diode device, comprising:
a substrate;
an epitaxial layered structure which includes a first-type semiconductor layer, an active layer, and a second-type semiconductor layer sequentially formed on said substrate in such order, and which is formed with an indentation extending through said second-type semiconductor layer and said active layer and terminating at said first-type semiconductor layer to expose a portion of said first-type semiconductor layer;
a first current-blocking layer formed on said epitaxial layered structure opposite to said substrate;
a current-spreading layer which is disposed on said epitaxial layered structure opposite to said substrate, which is disposed over said first current-blocking layer, and which is connected to said epitaxial layered structure;
a second current-blocking layer which is formed on said current-spreading layer opposite to said epitaxial layered structure; and
a distributed Bragg reflector which covers said epitaxial layered structure, said current-spreading layer, and said second current-blocking layer.