US 11,721,771 B2
Liquid semiconductor-halogen based electronics
Lars Voss, Livermore, CA (US); Clint Frye, Livermore, CA (US); Roger A. Henderson, Brentwood, CA (US); John Winter Murphy, Mountain House, CA (US); Rebecca J. Nikolic, Oakland, CA (US); Dongxia Qu, Livermore, CA (US); Qinghui Shao, Fremont, CA (US); and Mark A. Stoyer, Livermore, CA (US)
Assigned to Lawrence Livermore National Security, LLC, Livermore, CA (US)
Filed by Lawrence Livermore National Security, LLC, Livermore, CA (US)
Filed on Nov. 14, 2017, as Appl. No. 15/812,682.
Claims priority of provisional application 62/421,959, filed on Nov. 14, 2016.
Prior Publication US 2018/0145187 A1, May 24, 2018
Int. Cl. H01L 29/872 (2006.01); H01L 23/31 (2006.01); H01L 29/24 (2006.01); H01L 29/18 (2006.01); H01L 29/861 (2006.01); H01L 29/267 (2006.01); H01L 31/0272 (2006.01); H01L 31/0304 (2006.01); H01L 31/072 (2012.01); G21H 1/06 (2006.01)
CPC H01L 29/872 (2013.01) [G21H 1/06 (2013.01); H01L 23/3107 (2013.01); H01L 29/18 (2013.01); H01L 29/24 (2013.01); H01L 29/267 (2013.01); H01L 29/861 (2013.01); H01L 31/0272 (2013.01); H01L 31/02725 (2013.01); H01L 31/03044 (2013.01); H01L 31/072 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A device, comprising:
a first electrode;
a second electrode spaced from the first electrode;
a well extending between the first electrode and the second electrode;
one or more chalcogens in the well, the one or more chalcogens being selected from the group consisting of sulfur, selenium, tellurium, and polonium; and
at least one halogen mixed with the one or more chalcogens in the well,
wherein the at least one halogen is present in an effective amount to suppress the melting point of the one or more chalcogens by at least 5 degrees Celsius.