CPC H01L 29/7869 (2013.01) [H01L 21/02565 (2013.01); H01L 21/823412 (2013.01); H01L 27/127 (2013.01); H01L 27/1225 (2013.01); H01L 29/66969 (2013.01); H01L 29/7781 (2013.01); H01L 29/7782 (2013.01); H01L 29/7786 (2013.01); H01L 29/78648 (2013.01); H01L 29/78696 (2013.01); H01L 29/24 (2013.01)] | 15 Claims |
11. A semiconductor device comprising:
an oxide semiconductor film comprising a composite oxide semiconductor, the composite oxide semiconductor comprising a first region and a second region;
a gate electrode;
a gate insulating layer between the oxide semiconductor film and the gate electrode;
a source electrode electrically connected to the oxide semiconductor film; and
a drain electrode electrically connected to the oxide semiconductor film,
wherein the first region comprises indium and zinc,
wherein the second region comprises indium, zinc, and an element M selected from Al, Ga, Y, and Sn,
wherein an indium concentration in the first region is 2 to 10 times that in the second region, and
wherein the first region is surrounded with the second region.
|