US 11,721,769 B2
Semiconductor device and display device including the same
Shunpei Yamazaki, Tokyo (JP); Junichi Koezuka, Tochigi (JP); Kenichi Okazaki, Tochigi (JP); Yukinori Shima, Gunma (JP); Shinpei Matsuda, Kanagawa (JP); Haruyuki Baba, Kanagawa (JP); and Ryunosuke Honda, Kanagawa (JP)
Assigned to Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
Filed by Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
Filed on May 13, 2022, as Appl. No. 17/743,956.
Application 17/743,956 is a continuation of application No. 16/918,472, filed on Jul. 1, 2020, granted, now 11,489,076.
Application 16/918,472 is a continuation of application No. 16/355,913, filed on Mar. 18, 2019, granted, now 10,707,238, issued on Jul. 7, 2020.
Application 16/355,913 is a continuation of application No. 15/963,141, filed on Apr. 26, 2018, granted, now 10,236,306, issued on Mar. 19, 2019.
Application 15/963,141 is a continuation of application No. 15/464,534, filed on Mar. 21, 2017, granted, now 9,960,190, issued on May 1, 2018.
Claims priority of application No. 2016-057716 (JP), filed on Mar. 22, 2016; application No. 2016-057718 (JP), filed on Mar. 22, 2016; and application No. 2016-057720 (JP), filed on Mar. 22, 2016.
Prior Publication US 2022/0285555 A1, Sep. 8, 2022
Int. Cl. H01L 29/786 (2006.01); H01L 29/778 (2006.01); H01L 21/8234 (2006.01); H01L 21/02 (2006.01); H01L 27/12 (2006.01); H01L 29/66 (2006.01); H01L 29/24 (2006.01)
CPC H01L 29/7869 (2013.01) [H01L 21/02565 (2013.01); H01L 21/823412 (2013.01); H01L 27/127 (2013.01); H01L 27/1225 (2013.01); H01L 29/66969 (2013.01); H01L 29/7781 (2013.01); H01L 29/7782 (2013.01); H01L 29/7786 (2013.01); H01L 29/78648 (2013.01); H01L 29/78696 (2013.01); H01L 29/24 (2013.01)] 15 Claims
OG exemplary drawing
 
11. A semiconductor device comprising:
an oxide semiconductor film comprising a composite oxide semiconductor, the composite oxide semiconductor comprising a first region and a second region;
a gate electrode;
a gate insulating layer between the oxide semiconductor film and the gate electrode;
a source electrode electrically connected to the oxide semiconductor film; and
a drain electrode electrically connected to the oxide semiconductor film,
wherein the first region comprises indium and zinc,
wherein the second region comprises indium, zinc, and an element M selected from Al, Ga, Y, and Sn,
wherein an indium concentration in the first region is 2 to 10 times that in the second region, and
wherein the first region is surrounded with the second region.