US 11,721,768 B2
Transistor and display device including the same
Taesang Kim, Seoul (KR); Min Seong Kim, Seoul (KR); Hyun Jae Kim, Seoul (KR); and Jun Hyung Lim, Seoul (KR)
Assigned to SAMSUNG DISPLAY CO., LTD., Gyeonggi-do (KR); and INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY, Seoul (KR)
Filed by Samsung Display Co., LTD., Yongin-si (KR); and Industry-Academic Cooperation Foundation, Yonsei University, Seoul (KR)
Filed on Jun. 16, 2021, as Appl. No. 17/349,214.
Claims priority of application No. 10-2020-0091258 (KR), filed on Jul. 22, 2020.
Prior Publication US 2022/0029021 A1, Jan. 27, 2022
Int. Cl. H01L 27/00 (2006.01); H01L 29/00 (2006.01); H01L 29/786 (2006.01); H01L 27/12 (2006.01); H01L 29/10 (2006.01); H01L 29/24 (2006.01)
CPC H01L 29/7869 (2013.01) [H01L 27/1251 (2013.01); H01L 29/105 (2013.01); H01L 29/24 (2013.01)] 23 Claims
OG exemplary drawing
 
1. A transistor comprising:
a gate electrode;
an active layer facing the gate electrode; and
a source electrode and a drain electrode connected to the active layer,
wherein the active layer includes:
a lower active layer and an upper active layer which face each other and each include an oxide semiconductor material,
the upper active layer closer to the source electrode and the drain electrode than the lower active layer and further including an oxygen-gettering material,
the lower active layer excluding the oxygen-gettering material, and
each of the lower active layer and the upper active layer having a thickness,
wherein the thickness of the lower active layer is different from the thickness of the upper active layer.