US 11,721,763 B2
Semiconductor device and manufacturing method thereof
Wen-Che Tsai, Hsinchu (TW); Min-Yann Hsieh, Kaohsiung (TW); Hua-Feng Chen, Hsinchu (TW); and Kuo-Hua Pan, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed on Dec. 17, 2020, as Appl. No. 17/124,994.
Application 17/124,994 is a division of application No. 15/496,067, filed on Apr. 25, 2017, granted, now 10,872,980.
Prior Publication US 2021/0143277 A1, May 13, 2021
Int. Cl. H01L 29/78 (2006.01); H01L 21/768 (2006.01); H01L 29/66 (2006.01); H01L 29/417 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 29/165 (2006.01); H01L 23/485 (2006.01)
CPC H01L 29/7851 (2013.01) [H01L 21/76804 (2013.01); H01L 21/76831 (2013.01); H01L 21/76897 (2013.01); H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H01L 29/41766 (2013.01); H01L 29/41791 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 23/485 (2013.01); H01L 29/165 (2013.01); H01L 29/7848 (2013.01); H01L 2029/7858 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
forming a source/drain region on a substrate;
forming a dielectric layer over the source/drain region;
forming a contact hole in the dielectric layer;
forming a contact hole liner in the contact hole;
removing a first portion of the contact hole liner to expose a sidewall of the contact hole in a first etching step, wherein the first etching step also removes a portion of the contact hole liner to expose the source/drain region;
performing a second etching step to recess the source/drain region, wherein the second etching step also etches the exposed sidewall of the contact hole to laterally expand the contact hole; and
forming a contact plug in the laterally expanded contact hole.