US 11,721,762 B2
Fin field effect transistor (FinFET) device and method for forming the same
Zhe-Hao Zhang, Hsinchu (TW); Tung-Wen Cheng, New Taipei (TW); Che-Cheng Chang, New Taipei (TW); Yung-Jung Chang, Cyonglin Township (TW); and Chang-Yin Chen, Taipei (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsin-Chu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Nov. 16, 2020, as Appl. No. 17/99,456.
Application 16/231,032 is a division of application No. 14/517,209, filed on Oct. 17, 2014, granted, now 10,164,108, issued on Dec. 25, 2018.
Application 17/099,456 is a continuation of application No. 16/231,032, filed on Dec. 21, 2018, granted, now 10,840,378.
Prior Publication US 2021/0074859 A1, Mar. 11, 2021
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 21/762 (2006.01); H01L 21/306 (2006.01); H01L 29/165 (2006.01); H01L 21/8234 (2006.01); H01L 29/08 (2006.01); H01L 27/088 (2006.01); H01L 21/311 (2006.01)
CPC H01L 29/7851 (2013.01) [H01L 21/30604 (2013.01); H01L 21/31116 (2013.01); H01L 21/76224 (2013.01); H01L 21/823412 (2013.01); H01L 21/823431 (2013.01); H01L 21/823481 (2013.01); H01L 27/0886 (2013.01); H01L 29/0847 (2013.01); H01L 29/165 (2013.01); H01L 29/6653 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 29/7848 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a fin structure embedded in an isolation structure, wherein a top surface of the fin structure intersects a top surface of the isolation structure at an angle of greater than 90° and less than about 175°, wherein the angle is measured from a portion of the fin structure that is embedded in the isolation structure to a sidewall of the isolation structure; and
an epitaxial structure formed on a surface of the fin structure, wherein a cross section of the epitaxial structure has a pentagon-like shape, and wherein an interface between the epitaxial structure and a first portion of the fin structure is lower than a top surface of the isolation structure.