CPC H01L 29/7851 (2013.01) [H01L 21/30604 (2013.01); H01L 21/31116 (2013.01); H01L 21/76224 (2013.01); H01L 21/823412 (2013.01); H01L 21/823431 (2013.01); H01L 21/823481 (2013.01); H01L 27/0886 (2013.01); H01L 29/0847 (2013.01); H01L 29/165 (2013.01); H01L 29/6653 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 29/7848 (2013.01)] | 20 Claims |
1. A semiconductor device comprising:
a fin structure embedded in an isolation structure, wherein a top surface of the fin structure intersects a top surface of the isolation structure at an angle of greater than 90° and less than about 175°, wherein the angle is measured from a portion of the fin structure that is embedded in the isolation structure to a sidewall of the isolation structure; and
an epitaxial structure formed on a surface of the fin structure, wherein a cross section of the epitaxial structure has a pentagon-like shape, and wherein an interface between the epitaxial structure and a first portion of the fin structure is lower than a top surface of the isolation structure.
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