US 11,721,761 B2
Structure and method for providing line end extensions for fin-type active regions
Shao-Ming Yu, Hsinchu County (TW); Chang-Yun Chang, Taipei (TW); Chih-Hao Chang, Hsin-Chu (TW); Hsin-Chih Chen, Taipei County (TW); Kai-Tai Chang, Kaohsiung (TW); Ming-Feng Shieh, Tainan County (TW); Kuei-Liang Lu, Hsinchu (TW); and Yi-Tang Lin, Hsinchu (TW)
Assigned to Mosaid Technologies Incorporated, Ottawa (CA)
Filed by Mosaid Technologies Inc., Ottawa (CA)
Filed on Jan. 27, 2022, as Appl. No. 17/649,148.
Application 15/614,439 is a division of application No. 14/586,602, filed on Dec. 30, 2014, granted, now 9,673,328, issued on Jun. 6, 2017.
Application 17/649,148 is a continuation of application No. 16/726,405, filed on Dec. 24, 2019, granted, now 11,239,365.
Application 16/726,405 is a continuation of application No. 15/614,439, filed on Jun. 5, 2017, granted, now 10,573,751, issued on Feb. 25, 2020.
Application 14/586,602 is a continuation in part of application No. 13/356,235, filed on Jan. 23, 2012, granted, now 9,324,866, issued on Apr. 26, 2016.
Prior Publication US 2022/0223727 A1, Jul. 14, 2022
Int. Cl. H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 21/8234 (2006.01); H01L 21/67 (2006.01); H01L 27/088 (2006.01)
CPC H01L 29/785 (2013.01) [H01L 21/67248 (2013.01); H01L 21/823418 (2013.01); H01L 21/823431 (2013.01); H01L 21/823437 (2013.01); H01L 27/0886 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 29/7842 (2013.01); H01L 29/7848 (2013.01); H01L 21/823412 (2013.01)] 21 Claims
OG exemplary drawing
 
1. A semiconductor structure, comprising:
an isolation feature formed on a semiconductor substrate;
a first pedestal formed extending above the semiconductor substrate, wherein the first pedestal in a top view extends in a first direction to a first terminal end;
a second pedestal formed on the semiconductor substrate, wherein the second pedestal in the top view extends in the first direction to a second terminal end;
an isolation feature between the first pedestal and the second pedestal;
a first source/drain feature in the first pedestal adjacent the first terminal end;
a second source/drain feature in the second pedestal adjacent the second terminal end; and
a gate disposed over and directly contacting the isolation feature and disposed over and directly contacting the first terminal end of the first pedestal and the second terminal end of the second pedestal, wherein spacers on a first sidewall of the gate contact a top surface of the first pedestal and spacers on a second sidewall of the gate contact a top surface of the second pedestal, and wherein the spacers have a first thickness measured in the first direction at an upper portion of the gate and a second thickness measured in the first direction at the top surface of the first pedestal or the top surface of the second pedestal respectively, the first thickness being less than the second thickness.