CPC H01L 29/785 (2013.01) [H01L 21/67248 (2013.01); H01L 21/823418 (2013.01); H01L 21/823431 (2013.01); H01L 21/823437 (2013.01); H01L 27/0886 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 29/7842 (2013.01); H01L 29/7848 (2013.01); H01L 21/823412 (2013.01)] | 21 Claims |
1. A semiconductor structure, comprising:
an isolation feature formed on a semiconductor substrate;
a first pedestal formed extending above the semiconductor substrate, wherein the first pedestal in a top view extends in a first direction to a first terminal end;
a second pedestal formed on the semiconductor substrate, wherein the second pedestal in the top view extends in the first direction to a second terminal end;
an isolation feature between the first pedestal and the second pedestal;
a first source/drain feature in the first pedestal adjacent the first terminal end;
a second source/drain feature in the second pedestal adjacent the second terminal end; and
a gate disposed over and directly contacting the isolation feature and disposed over and directly contacting the first terminal end of the first pedestal and the second terminal end of the second pedestal, wherein spacers on a first sidewall of the gate contact a top surface of the first pedestal and spacers on a second sidewall of the gate contact a top surface of the second pedestal, and wherein the spacers have a first thickness measured in the first direction at an upper portion of the gate and a second thickness measured in the first direction at the top surface of the first pedestal or the top surface of the second pedestal respectively, the first thickness being less than the second thickness.
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