CPC H01L 29/7848 (2013.01) [H01L 21/02527 (2013.01); H01L 21/02532 (2013.01); H01L 21/30604 (2013.01); H01L 29/04 (2013.01); H01L 29/0847 (2013.01); H01L 29/165 (2013.01); H01L 29/167 (2013.01); H01L 29/66628 (2013.01); H01L 29/66636 (2013.01)] | 20 Claims |
1. A semiconductor device comprising:
a doped epitaxy embedded in a substrate, the doped epitaxy comprising:
a plurality of doped first material layers comprising a first material and a dopant, the dopant including arsenic, antimony, lithium, boron, phosphorous, aluminum, nitrogen, gallium, or indium; and
one or more boosting layers comprising the first material, the dopant, and a second material, the first material being a semiconductor material, the second material being carbon, each one of the one or more boosting layers being between two layers of the plurality of doped first material layers, each of the one or more boosting layers being thinner than the each of the plurality of doped first material layers, wherein a gradient of dopant concentration is formed within the doped epitaxy from layer to layer, wherein a peak concentration of the dopant is higher in each of the boosting layers than a peak concentration of the dopant in each of plurality of doped first material layers.
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