US 11,721,760 B2
Dopant concentration boost in epitaxially formed material
Chih-Yu Ma, Hsinchu (TW); Zheng-Yang Pan, Zhubei (TW); Shih-Chieh Chang, Taipei (TW); and Cheng-Han Lee, New Taipei (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsin-Chu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Nov. 21, 2019, as Appl. No. 16/690,194.
Application 16/690,194 is a division of application No. 15/418,023, filed on Jan. 27, 2017, granted, now 10,490,661.
Claims priority of provisional application 62/427,752, filed on Nov. 29, 2016.
Prior Publication US 2020/0091343 A1, Mar. 19, 2020
Int. Cl. H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 21/306 (2006.01); H01L 29/04 (2006.01); H01L 29/08 (2006.01); H01L 29/165 (2006.01); H01L 29/167 (2006.01)
CPC H01L 29/7848 (2013.01) [H01L 21/02527 (2013.01); H01L 21/02532 (2013.01); H01L 21/30604 (2013.01); H01L 29/04 (2013.01); H01L 29/0847 (2013.01); H01L 29/165 (2013.01); H01L 29/167 (2013.01); H01L 29/66628 (2013.01); H01L 29/66636 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a doped epitaxy embedded in a substrate, the doped epitaxy comprising:
a plurality of doped first material layers comprising a first material and a dopant, the dopant including arsenic, antimony, lithium, boron, phosphorous, aluminum, nitrogen, gallium, or indium; and
one or more boosting layers comprising the first material, the dopant, and a second material, the first material being a semiconductor material, the second material being carbon, each one of the one or more boosting layers being between two layers of the plurality of doped first material layers, each of the one or more boosting layers being thinner than the each of the plurality of doped first material layers, wherein a gradient of dopant concentration is formed within the doped epitaxy from layer to layer, wherein a peak concentration of the dopant is higher in each of the boosting layers than a peak concentration of the dopant in each of plurality of doped first material layers.