CPC H01L 29/66977 (2013.01) [G06N 10/00 (2019.01); H01L 27/088 (2013.01); H01L 29/127 (2013.01); H01L 29/437 (2013.01); H01L 29/49 (2013.01); H01L 27/105 (2013.01); H01L 29/82 (2013.01)] | 20 Claims |
1. A quantum dot device, comprising:
a quantum well stack;
parallel first gate lines at a first distance from the quantum well stack;
parallel second gate lines at a second distance from the quantum well stack; and
parallel third gate lines at a third distance from the quantum well stack,
wherein the first distance is greater than the second distance, and the second distance is greater than the third distance.
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