US 11,721,748 B2
Quantum dot devices
Kanwaljit Singh, Rotterdam (NL); James S. Clarke, Portland, OR (US); Menno Veldhorst, Bergschenhoek (NL); and Lieven Mark Koenraad Vandersypen, Delft (NL)
Assigned to Intel Corporation, Santa Clara, CA (US); and Technische Universiteit Delft, Delft (NL)
Filed by Intel Corporation, Santa Clara, CA (US); and Technische Universiteit Delft, Delft (NL)
Filed on Jun. 8, 2021, as Appl. No. 17/342,093.
Application 17/342,093 is a continuation of application No. 16/616,350, granted, now 11,063,138, previously published as PCT/US2017/039155, filed on Jun. 24, 2017.
Prior Publication US 2021/0296473 A1, Sep. 23, 2021
Int. Cl. H01L 29/66 (2006.01); G06N 10/00 (2022.01); H01L 27/088 (2006.01); H01L 29/43 (2006.01); H01L 29/49 (2006.01); H01L 29/12 (2006.01); H01L 27/105 (2023.01); H01L 29/82 (2006.01)
CPC H01L 29/66977 (2013.01) [G06N 10/00 (2019.01); H01L 27/088 (2013.01); H01L 29/127 (2013.01); H01L 29/437 (2013.01); H01L 29/49 (2013.01); H01L 27/105 (2013.01); H01L 29/82 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A quantum dot device, comprising:
a quantum well stack;
parallel first gate lines at a first distance from the quantum well stack;
parallel second gate lines at a second distance from the quantum well stack; and
parallel third gate lines at a third distance from the quantum well stack,
wherein the first distance is greater than the second distance, and the second distance is greater than the third distance.