US 11,721,745 B2
Methods for increasing germanium concentration of surfaces of a silicon germanium portion of a fin and resulting semiconductor devices
Che-Yu Lin, Hsinchu (TW); Chien-Hung Chen, Hsinchu (TW); and Wen-Chu Hsiao, Tainan (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on May 17, 2021, as Appl. No. 17/322,526.
Application 17/322,526 is a continuation of application No. 16/371,436, filed on Apr. 1, 2019, granted, now 11,011,623.
Claims priority of provisional application 62/692,018, filed on Jun. 29, 2018.
Prior Publication US 2021/0273080 A1, Sep. 2, 2021
Int. Cl. H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 21/3065 (2006.01); H01L 21/30 (2006.01); H01L 29/40 (2006.01); H01L 29/08 (2006.01); H01L 21/762 (2006.01); H01L 29/165 (2006.01); H01L 29/78 (2006.01); H01L 21/3105 (2006.01); H01L 21/311 (2006.01); H01L 21/265 (2006.01)
CPC H01L 29/66795 (2013.01) [H01L 21/02164 (2013.01); H01L 21/02271 (2013.01); H01L 21/02381 (2013.01); H01L 21/02532 (2013.01); H01L 21/3003 (2013.01); H01L 21/3065 (2013.01); H01L 21/31053 (2013.01); H01L 21/31116 (2013.01); H01L 21/76224 (2013.01); H01L 29/0847 (2013.01); H01L 29/165 (2013.01); H01L 29/401 (2013.01); H01L 29/66545 (2013.01); H01L 29/7833 (2013.01); H01L 29/7851 (2013.01); H01L 21/26513 (2013.01); H01L 29/6656 (2013.01); H01L 29/66636 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A device comprising:
an isolation region on a substrate;
a fin comprising a silicon portion and a silicon germanium portion over the silicon portion, the silicon portion and a lower portion of the silicon germanium portion disposed in the isolation region, an upper portion of the silicon germanium portion protruding above the isolation region, edge portions of the upper portion of the silicon germanium portion having a greater germanium concentration than edge portions of the lower portion of the silicon germanium portion, edge portions of the upper portion of the silicon germanium portion having a greater germanium concentration than a center of the upper portion of the silicon germanium portion; and
a gate stack on the upper portion of the silicon germanium portion.