US 11,721,737 B2
Quantum dot devices with trenched substrates
Ravi Pillarisetty, Portland, OR (US); Van H. Le, Beaverton, OR (US); Jeanette M. Roberts, North Plains, OR (US); David J. Michalak, Portland, OR (US); James S. Clarke, Portland, OR (US); and Zachary R. Yoscovits, Beaverton, OR (US)
Assigned to Intel Corporation, Santa Clara, CA (US)
Filed by Intel Corporation, Santa Clara, CA (US)
Filed on Aug. 13, 2021, as Appl. No. 17/401,692.
Application 17/401,692 is a continuation of application No. 16/307,853, granted, now 11,158,714, previously published as PCT/US2016/036580, filed on Jun. 9, 2016.
Prior Publication US 2021/0376102 A1, Dec. 2, 2021
Int. Cl. H01L 29/423 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01); H01L 29/775 (2006.01); H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 29/778 (2006.01); H01L 29/165 (2006.01)
CPC H01L 29/42376 (2013.01) [H01L 29/0649 (2013.01); H01L 29/41791 (2013.01); H01L 29/66431 (2013.01); H01L 29/66439 (2013.01); H01L 29/66795 (2013.01); H01L 29/66977 (2013.01); H01L 29/775 (2013.01); H01L 29/785 (2013.01); H01L 29/165 (2013.01); H01L 29/7781 (2013.01); H01L 29/7782 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A quantum dot device, comprising:
a substrate having a trench disposed therein, wherein a bottom of the trench is provided by a first material;
a quantum well stack at least partially disposed in the trench, wherein a material of the quantum well stack is in contact with the bottom of the trench, and the material of the quantum well stack is different from the first material;
a first doped region disposed in the trench and proximate a first end of the trench;
a second doped region disposed in the trench and proximate a second end of the trench, the second end of the trench opposite the first end of the trench; and
a plurality of gates provided over a continuous portion of the quantum well stack between the first doped region and the second doped region.