CPC H01L 29/42376 (2013.01) [H01L 29/66545 (2013.01); H01L 29/66553 (2013.01); H01L 29/7783 (2013.01)] | 17 Claims |
1. An electronic device comprising:
a gate structure including:
a gate electrode including a doped semiconductor material;
a first metal-containing member overlying the gate electrode and including a first metal nitride material;
a second metal-containing member overlying the first metal-containing member, wherein the second metal-containing member has a first side and a second side opposite the first side;
a third metal-containing member covering an upper surface of the second metal-containing member, wherein the third metal-containing member includes a second metal nitride material;
a first conductive sidewall spacer overlying the gate electrode and adjacent to the first side of the second metal-containing member, wherein the first conductive sidewall spacer includes a third metal nitride material; and
a second conductive sidewall spacer overlying the gate electrode and adjacent to the second side of the second metal-containing member, wherein the second conductive sidewall spacer includes a fourth metal nitride material.
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