US 11,721,736 B2
Electronic device including a gate structure and a process of forming the same
Aurore Constant, Oudenaarde (BE); and Joris Baele, Ghent (BE)
Assigned to SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Scottsdale, AZ (US)
Filed by SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Phoenix, AZ (US)
Filed on Feb. 10, 2021, as Appl. No. 17/172,243.
Prior Publication US 2022/0254894 A1, Aug. 11, 2022
Int. Cl. H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/778 (2006.01)
CPC H01L 29/42376 (2013.01) [H01L 29/66545 (2013.01); H01L 29/66553 (2013.01); H01L 29/7783 (2013.01)] 17 Claims
OG exemplary drawing
 
1. An electronic device comprising:
a gate structure including:
a gate electrode including a doped semiconductor material;
a first metal-containing member overlying the gate electrode and including a first metal nitride material;
a second metal-containing member overlying the first metal-containing member, wherein the second metal-containing member has a first side and a second side opposite the first side;
a third metal-containing member covering an upper surface of the second metal-containing member, wherein the third metal-containing member includes a second metal nitride material;
a first conductive sidewall spacer overlying the gate electrode and adjacent to the first side of the second metal-containing member, wherein the first conductive sidewall spacer includes a third metal nitride material; and
a second conductive sidewall spacer overlying the gate electrode and adjacent to the second side of the second metal-containing member, wherein the second conductive sidewall spacer includes a fourth metal nitride material.