CPC H01L 29/4236 (2013.01) [H01L 21/823412 (2013.01); H01L 21/823437 (2013.01); H01L 29/42384 (2013.01); H01L 29/66757 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01); H01L 29/78603 (2013.01); H01L 29/78618 (2013.01); H01L 29/78642 (2013.01); H01L 29/78696 (2013.01); H01L 29/66545 (2013.01)] | 20 Claims |
1. An integrated circuit structure, comprising:
an insulator structure above a substrate, the insulator structure having a U-shaped feature, the U-shaped feature having a first side, a bottom, and a second side;
a channel material layer on the first side, on the bottom, and on the second side of the U-shaped feature of the insulator structure;
a gate electrode over the channel material layer and at least partially within the U-shaped feature;
a first source or drain region coupled to the channel material layer at a first side of the insulator structure; and
a second source or drain region coupled to the channel material layer at a second side of the insulator structure, wherein the U-shaped feature of the insulator structure is between the first source or drain region and the second source or drain region.
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