US 11,721,735 B2
Thin film transistors having U-shaped features
Gilbert Dewey, Beaverton, OR (US); Aaron Lilak, Beaverton, OR (US); Van H. Le, Portland, OR (US); Abhishek A. Sharma, Portland, OR (US); Tahir Ghani, Portland, OR (US); Willy Rachmady, Beaverton, OR (US); Rishabh Mehandru, Portland, OR (US); Nazila Haratipour, Portland, OR (US); Jack T. Kavalieros, Portland, OR (US); Benjamin Chu-Kung, Boise, ID (US); Seung Hoon Sung, Portland, OR (US); and Shriram Shivaraman, Hillsboro, OR (US)
Assigned to Intel Corporation, Santa Clara, CA (US)
Filed by Intel Corporation, Santa Clara, CA (US)
Filed on Jan. 20, 2022, as Appl. No. 17/580,550.
Application 17/580,550 is a continuation of application No. 16/024,682, filed on Jun. 29, 2018, granted, now 11,264,512.
Prior Publication US 2022/0149209 A1, May 12, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 29/423 (2006.01); H01L 29/786 (2006.01); H01L 29/66 (2006.01); H01L 21/8234 (2006.01)
CPC H01L 29/4236 (2013.01) [H01L 21/823412 (2013.01); H01L 21/823437 (2013.01); H01L 29/42384 (2013.01); H01L 29/66757 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01); H01L 29/78603 (2013.01); H01L 29/78618 (2013.01); H01L 29/78642 (2013.01); H01L 29/78696 (2013.01); H01L 29/66545 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An integrated circuit structure, comprising:
an insulator structure above a substrate, the insulator structure having a U-shaped feature, the U-shaped feature having a first side, a bottom, and a second side;
a channel material layer on the first side, on the bottom, and on the second side of the U-shaped feature of the insulator structure;
a gate electrode over the channel material layer and at least partially within the U-shaped feature;
a first source or drain region coupled to the channel material layer at a first side of the insulator structure; and
a second source or drain region coupled to the channel material layer at a second side of the insulator structure, wherein the U-shaped feature of the insulator structure is between the first source or drain region and the second source or drain region.