CPC H01L 29/41775 (2013.01) [H01L 29/41791 (2013.01); H01L 29/7851 (2013.01)] | 19 Claims |
1. A structure comprising:
adjacent diffusion regions located within a substrate material;
gate structures above the substrate material and located between the adjacent diffusion regions;
sidewall structures above an upper surface of the substrate material and on sidewalls of a trench within interlevel dielectric material, the sidewall structures being aligned on sides of the adjacent diffusion regions and remote from the gate structures; and
a contact between the sidewall structures and extending to within the substrate material between and in electrical contact with the adjacent diffusion regions.
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