US 11,721,728 B2
Self-aligned contact
Sipeng Gu, Clifton Park, NY (US); Jiehui Shu, Dalian (CN); Halting Wang, Clifton Park, NY (US); and Yanping Shen, Saratoga Springs, NY (US)
Assigned to GLOBALFOUNDRIES U.S. INC., Malta, NY (US)
Filed by GLOBALFOUNDRIES U.S. INC., Santa Clara, CA (US)
Filed on Jan. 30, 2020, as Appl. No. 16/777,531.
Prior Publication US 2021/0242317 A1, Aug. 5, 2021
Int. Cl. H01L 29/417 (2006.01); H01L 29/78 (2006.01)
CPC H01L 29/41775 (2013.01) [H01L 29/41791 (2013.01); H01L 29/7851 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A structure comprising:
adjacent diffusion regions located within a substrate material;
gate structures above the substrate material and located between the adjacent diffusion regions;
sidewall structures above an upper surface of the substrate material and on sidewalls of a trench within interlevel dielectric material, the sidewall structures being aligned on sides of the adjacent diffusion regions and remote from the gate structures; and
a contact between the sidewall structures and extending to within the substrate material between and in electrical contact with the adjacent diffusion regions.