CPC H01L 29/15 (2013.01) [G06N 10/00 (2019.01); H01L 23/473 (2013.01); H01L 29/42376 (2013.01); H01L 29/437 (2013.01); H01L 29/49 (2013.01); H01L 29/775 (2013.01)] | 20 Claims |
1. A quantum dot device, comprising:
a quantum well stack;
a plurality of first gate lines in a first layer above the quantum well stack;
a plurality of second gate lines in a second layer above the quantum well stack, wherein the second gate lines are perpendicular to the first gate lines; and
a plurality of third gate lines in a third layer above the quantum well stack,
wherein the second layer is between the first layer and the third layer and wherein the third gate lines include a magnetic material or a superconducting material to generate a magnetic field during operation of the quantum dot device.
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