US 11,721,725 B2
Quantum dot devices
Kanwaljit Singh, Rotterdam (NL); James S. Clarke, Portland, OR (US); Menno Veldhorst, Bergschenhoek (NL); and Lieven Mark Koenraad Vandersypen, Delft (NL)
Assigned to Intel Corporation, Santa Clara, CA (US); and Technische Universiteit Delft, Delft (NL)
Filed by Intel Corporation, Santa Clara, CA (US); and Technische Universiteit Delft, Delft (NL)
Filed on Feb. 24, 2022, as Appl. No. 17/679,875.
Application 17/679,875 is a continuation of application No. 16/616,427, granted, now 11,322,591, previously published as PCT/US2017/039156, filed on Jun. 24, 2017.
Prior Publication US 2022/0181445 A1, Jun. 9, 2022
Int. Cl. H01L 29/15 (2006.01); G06N 10/00 (2022.01); H01L 23/473 (2006.01); H01L 29/423 (2006.01); H01L 29/43 (2006.01); H01L 29/49 (2006.01); H01L 29/775 (2006.01)
CPC H01L 29/15 (2013.01) [G06N 10/00 (2019.01); H01L 23/473 (2013.01); H01L 29/42376 (2013.01); H01L 29/437 (2013.01); H01L 29/49 (2013.01); H01L 29/775 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A quantum dot device, comprising:
a quantum well stack;
a plurality of first gate lines in a first layer above the quantum well stack;
a plurality of second gate lines in a second layer above the quantum well stack, wherein the second gate lines are perpendicular to the first gate lines; and
a plurality of third gate lines in a third layer above the quantum well stack,
wherein the second layer is between the first layer and the third layer and wherein the third gate lines include a magnetic material or a superconducting material to generate a magnetic field during operation of the quantum dot device.