CPC H01L 29/122 (2013.01) [H01L 21/823431 (2013.01); H01L 27/0886 (2013.01); H01L 29/66977 (2013.01); H01L 29/66984 (2013.01); H01L 29/82 (2013.01)] | 20 Claims |
1. A quantum dot device, comprising:
a quantum well stack including a quantum well layer, wherein the quantum well layer includes a material that includes silicon and germanium; and
a gate above the quantum well stack,
wherein the silicon includes 29Si in an amount less than 4 atomic-percent and the germanium includes 73Ge in an amount less than 7 atomic-percent.
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