US 11,721,723 B2
Quantum dot devices
Kanwaljit Singh, Rotterdam (NL); James S. Clarke, Portland, OR (US); Menno Veldhorst, Bergschenhoek (NL); and Lieven Mark Koenraad Vandersypen, Delft (NL)
Assigned to Intel Corporation, Santa Clara, CA (US); and Technische Universiteit Delft, Delft (NL)
Filed by Intel Corporation, Santa Clara, CA (US); and Technishce Universiteit Delft, Delft (NL)
Filed on May 14, 2021, as Appl. No. 17/321,046.
Application 17/321,046 is a continuation of application No. 16/616,419, granted, now 11,038,021, previously published as PCT/US2017/039154, filed on Jun. 24, 2017.
Prior Publication US 2021/0280676 A1, Sep. 9, 2021
Int. Cl. H01L 29/12 (2006.01); G06N 10/00 (2022.01); H01L 29/66 (2006.01); B82Y 10/00 (2011.01); B82Y 40/00 (2011.01)
CPC H01L 29/122 (2013.01) [G06N 10/00 (2019.01); H01L 29/66977 (2013.01); B82Y 10/00 (2013.01); B82Y 40/00 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A quantum dot device, comprising:
a quantum well stack;
a plurality of first gate lines above the quantum well stack;
a plurality of second gate lines above the quantum well stack, wherein the second gate lines are perpendicular to the first gate lines; and
an array of regularly spaced conductive lines.