CPC H01L 29/1008 (2013.01) [H01L 29/0649 (2013.01); H01L 29/0808 (2013.01); H01L 29/0817 (2013.01); H01L 29/0821 (2013.01); H01L 29/66242 (2013.01); H01L 29/735 (2013.01); H01L 29/737 (2013.01); H01L 29/7842 (2013.01)] | 20 Claims |
1. A structure for a bipolar junction transistor, the structure comprising:
a collector including a raised portion;
an emitter including a raised portion;
a base laterally arranged between the raised portion of the emitter and the raised portion of the collector, the base including an intrinsic base layer and an extrinsic base layer stacked with the intrinsic base layer; and
a stress liner positioned to overlap with the raised portion of the collector, the raised portion of the emitter, and the extrinsic base layer.
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