US 11,721,722 B2
Bipolar junction transistors including a stress liner
Man Gu, Malta, NY (US); Jagar Singh, Clifton Park, NY (US); Haiting Wang, Clifton Park, NY (US); and Jeffrey Johnson, Essex Junction, VT (US)
Assigned to GlobalFoundries U.S. Inc., Malta, NY (US)
Filed by GlobalFoundries U.S. Inc., Malta, NY (US)
Filed on Nov. 11, 2021, as Appl. No. 17/524,438.
Claims priority of provisional application 63/237,829, filed on Aug. 27, 2021.
Prior Publication US 2023/0063900 A1, Mar. 2, 2023
Int. Cl. H01L 29/10 (2006.01); H01L 29/08 (2006.01); H01L 29/735 (2006.01); H01L 29/737 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01)
CPC H01L 29/1008 (2013.01) [H01L 29/0649 (2013.01); H01L 29/0808 (2013.01); H01L 29/0817 (2013.01); H01L 29/0821 (2013.01); H01L 29/66242 (2013.01); H01L 29/735 (2013.01); H01L 29/737 (2013.01); H01L 29/7842 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A structure for a bipolar junction transistor, the structure comprising:
a collector including a raised portion;
an emitter including a raised portion;
a base laterally arranged between the raised portion of the emitter and the raised portion of the collector, the base including an intrinsic base layer and an extrinsic base layer stacked with the intrinsic base layer; and
a stress liner positioned to overlap with the raised portion of the collector, the raised portion of the emitter, and the extrinsic base layer.