CPC H01L 29/0642 (2013.01) [H01L 21/763 (2013.01); H01L 29/0826 (2013.01); H01L 29/165 (2013.01); H01L 29/66242 (2013.01); H01L 29/7371 (2013.01)] | 8 Claims |
1. A structure comprising:
a trap rich isolation region embedded within a bulk substrate;
a heterojunction bipolar transistor above the trap rich isolation region, with its sub-collector region separated from the trap rich isolation region by a layer of the bulk substrate; and
an additional trap rich isolation region under shallow trench isolation structures, the additional trap rich isolation region being vertical above the trap rich isolation region and separated from the trap rich isolation region by the bulk substrate.
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