US 11,721,699 B2
Semiconductor device and method of manufacture
Wan-Yi Kao, Baoshan Township (TW); Hung Cheng Lin, Hsinchu (TW); Chunyao Wang, Zhubei (TW); Yung-Cheng Lu, Hsinchu (TW); and Chi On Chui, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Jan. 25, 2021, as Appl. No. 17/157,182.
Claims priority of provisional application 63/058,654, filed on Jul. 30, 2020.
Prior Publication US 2022/0037321 A1, Feb. 3, 2022
Int. Cl. H01L 27/092 (2006.01); H01L 21/8234 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01)
CPC H01L 27/0924 (2013.01) [H01L 21/823431 (2013.01); H01L 29/66795 (2013.01); H01L 29/7851 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of manufacturing a semiconductor device, the method comprising:
forming an opening within a dielectric material, the dielectric material being located between semiconductor fins; and
depositing a first dielectric material within the opening, the depositing the first dielectric material comprising:
pulsing a first precursor material for a first time of between about 20 seconds and about 120 seconds;
pulsing a second precursor material for a second time of between about 70 seconds and about 200 seconds, the second precursor material being different from the first precursor material;
pulsing a third precursor material for a third time of between about 20 seconds and about 120 seconds, the third precursor material being different from both the first precursor material and the second precursor material;
prior to the depositing the first dielectric material, depositing a blocking layer within the opening, the depositing the blocking layer comprising:
pulsing the first precursor material for a fourth time less than the first time;
pulsing the second precursor material for a fifth time less than the second time; and
pulsing the third precursor material for a sixth time less than the third time.