| CPC H01L 27/088 (2013.01) [H01L 21/823418 (2013.01); H01L 21/823456 (2013.01); H01L 21/823481 (2013.01)] | 20 Claims |
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1. A semiconductor device, comprising:
a substrate including a first area and a second area, wherein a first density of transistors formed in the first area is greater than a second density of transistors formed in the second area;
wherein the semiconductor device in the first area comprises:
a first isolation structure;
a plurality of first channel layers that are formed over the first isolation structure and extend along a first direction; and
a first gate structure that wraps around each of the plurality of first channel layers and extends along a second direction perpendicular to the first direction;
wherein a topmost layer of the first channel layers and a bottommost layer of the first channel layers are separated by a first distance; and
wherein the first gate structure has a first height that extends from a top surface of the first isolation structure to a top surface of the first gate structure;
wherein the semiconductor device in the second area comprises:
a second isolation structure;
a plurality of second channel layers that are formed over the second isolation structure and extend along the first direction; and
a second gate structure that wraps around each of the plurality of second channel layers and extends along the second direction; and
wherein a topmost layer of the second channel layers and a bottommost layer of the second channel layers are separated by a second distance; and
wherein the second gate structure has a second height that extends from a top surface of the second isolation structure to a top surface of the second gate structure;
wherein the second height is greater than the first height; and
wherein the first distance is the same as the second distance.
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