US 11,721,692 B2
Semiconductor device and fabrication method thereof
Qiyue Zhao, Zhuhai (CN); Wuhao Gao, Zhuhai (CN); and Zu Er Chen, Zhuhai (CN)
Assigned to INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD., Zhuhai (CN)
Appl. No. 16/969,200
Filed by INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD., Zhuhai (CN)
PCT Filed Jul. 3, 2020, PCT No. PCT/CN2020/100142
§ 371(c)(1), (2) Date Aug. 12, 2020,
PCT Pub. No. WO2022/000472, PCT Pub. Date Jan. 6, 2022.
Prior Publication US 2022/0005806 A1, Jan. 6, 2022
Int. Cl. H01L 29/778 (2006.01); H01L 27/085 (2006.01); H01L 21/02 (2006.01); H01L 21/8252 (2006.01); H01L 23/29 (2006.01); H01L 23/31 (2006.01); H01L 29/20 (2006.01); H01L 29/205 (2006.01); H01L 29/66 (2006.01); H01L 27/06 (2006.01); H01L 27/095 (2006.01)
CPC H01L 27/085 (2013.01) [H01L 21/0217 (2013.01); H01L 21/02164 (2013.01); H01L 21/02178 (2013.01); H01L 21/8252 (2013.01); H01L 23/291 (2013.01); H01L 23/3171 (2013.01); H01L 23/3192 (2013.01); H01L 27/0605 (2013.01); H01L 27/095 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/66462 (2013.01); H01L 29/7786 (2013.01)] 13 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a III-V material layer;
a first gate and a second gate on the III-V material layer respectively forming portions of first and second transistors, wherein the first gate comprises a first portion on the III-V material layer and a second portion on the first portion, and the first portion of the first gate comprises a first p-type doped group III-V layer, wherein the second gate comprises a first portion on the III-V material layer and a second portion on the first portion, and the first portion of the second gate comprises a second p-type doped group III-V layer; and
a first passivation layer on the first gate;
wherein a first activation ratio of an element in the first p-type doped group III-V layer of the first gate is different from a second activation ratio of the element in the second p-type doped group III-V layer of the second gate;
wherein the first and second transistors have different threshold voltages.