US 11,721,691 B2
Device having bipolar junction transistors and finFET transistors on the same substrate
Runzi Chang, Saratoga, CA (US); and Bo Wang, Sunnyvale, CA (US)
Assigned to MARVELL ASIA PTE LTD, Singapore (SG)
Filed by Marvell Asia Pte Ltd, Singapore (SG)
Filed on Mar. 18, 2021, as Appl. No. 17/204,971.
Claims priority of provisional application 62/993,475, filed on Mar. 23, 2020.
Prior Publication US 2021/0296309 A1, Sep. 23, 2021
Int. Cl. H01L 27/07 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/73 (2006.01)
CPC H01L 27/0711 (2013.01) [H01L 29/66234 (2013.01); H01L 29/66795 (2013.01); H01L 29/7302 (2013.01); H01L 29/785 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A method for producing a semiconductor device, the method comprising:
forming, on a substrate made from a semiconductor substance, at least one bipolar junction (BJ) transistor comprising a first terminal connected to a first well, the first well formed in the substrate and comprising a first dopant having a first dopant concentration;
forming on the substrate at least one non-BJ transistor, comprising a second terminal connected to a second well, the second well formed in the substrate and comprising a second dopant having a same polarity as the first dopant,
wherein the first dopant concentration of the BJ transistor is higher than a second dopant concentration of the non-BJ transistor; and
forming on the substrate at least an additional non-BJ transistor, different from the non-BJ transistor, the additional non-BJ transistor comprising a third terminal directly connected to a third well, the third well formed in the substrate and comprising a third dopant having (i) the same polarity as the first dopant and (ii) a third dopant concentration that is lower than the first dopant concentration.