US 11,721,689 B2
Semiconductor device having a semiconductor channel region and a semiconductor auxiliary region
Johannes Georg Laven, Taufkirchen (DE); Roman Baburske, Otterfing (DE); Thomas Basler, Riemerling (DE); Philip Christoph Brandt, Oberhaching (DE); and Maria Cotorogea, Taufkirchen (DE)
Assigned to Infineon Technologies AG, Neubiberg (DE)
Filed by Infineon Technologies AG, Neubiberg (DE)
Filed on Aug. 2, 2022, as Appl. No. 17/878,990.
Application 16/844,674 is a division of application No. 14/971,677, filed on Dec. 16, 2015, granted, now 10,651,165, issued on May 12, 2020.
Application 17/878,990 is a continuation of application No. 16/844,674, filed on Apr. 9, 2020, granted, now 11,410,989.
Claims priority of application No. 102014226161.9 (DE), filed on Dec. 17, 2014.
Prior Publication US 2022/0367443 A1, Nov. 17, 2022
Int. Cl. H01L 27/02 (2006.01); H01L 29/40 (2006.01); H01L 29/861 (2006.01); H01L 29/10 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/423 (2006.01); H01L 29/739 (2006.01); H03K 17/082 (2006.01)
CPC H01L 27/0266 (2013.01) [H01L 27/0255 (2013.01); H01L 27/0262 (2013.01); H01L 29/0619 (2013.01); H01L 29/0684 (2013.01); H01L 29/0696 (2013.01); H01L 29/0865 (2013.01); H01L 29/1033 (2013.01); H01L 29/1095 (2013.01); H01L 29/407 (2013.01); H01L 29/4236 (2013.01); H01L 29/7397 (2013.01); H01L 29/861 (2013.01); H01L 29/8613 (2013.01); H03K 17/0828 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a semiconductor region comprising charge carriers of a first conductivity type;
a transistor cell included in the semiconductor region;
a semiconductor channel region included in the transistor cell, the semiconductor channel region having a first doping concentration of charge carriers of a second conductivity type complementary to the first conductivity type, wherein a transition between the semiconductor channel region and the semiconductor region forms a first pn-junction;
a semiconductor auxiliary region included in the semiconductor region and different from the semiconductor channel region, the semiconductor auxiliary region having a second doping concentration of charge carriers of the second conductivity type,
wherein a transition between the semiconductor auxiliary region and the semiconductor region forms a second pn-junction, the second pn-junction being positioned deeper in the semiconductor region as compared to the first pn-junction,
wherein the semiconductor auxiliary region is positioned closest to the semiconductor channel region as compared to any other semiconductor region of the semiconductor device that comprises charge carriers of the second conductivity type and that forms a further pn-junction with the semiconductor region;
wherein the semiconductor channel region is located between a first trench and a second trench,
wherein the first trench comprises a first electrode and a first dielectric isolating the first electrode from the semiconductor body,
wherein the second trench comprises a gate electrode for controlling the transistor cell and a second dielectric isolating the gate electrode from the semiconductor body,
wherein the semiconductor auxiliary region is arranged in contact both with the first trench and the second trench.