US 11,721,687 B2
Semiconductor structures having wells with protruding sections for pickup cells
Yung Feng Chang, Hsinchu (TW); Chun-Chia Hsu, Hsinchu (TW); Tung-Heng Hsieh, Hsinchu County (TW); and Bao-Ru Young, Hsinchu County (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Jul. 29, 2022, as Appl. No. 17/876,954.
Application 17/876,954 is a continuation of application No. 17/213,979, filed on Mar. 26, 2021, granted, now 11,482,518.
Prior Publication US 2022/0367441 A1, Nov. 17, 2022
Int. Cl. H01L 27/02 (2006.01); H01L 27/092 (2006.01); H01L 29/08 (2006.01)
CPC H01L 27/0207 (2013.01) [H01L 27/0924 (2013.01); H01L 29/0847 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor structure, comprising:
a substrate having a first well of a first conductivity type and a second well of a second conductivity type that is opposite of the first conductivity type, wherein from a top view, the first well includes a first edge that is generally straight and extends along a first direction and a second edge that is opposite to the first edge and extends generally along the first direction, wherein the second edge has multiple turns, resulting in a protruding section of the first well that protrudes out of a main body of the first well and a recessed section of the first well that recedes into the main body of the first well;
a first source/drain feature over the protruding section of the first well in a cross-sectional view, wherein the first source/drain feature is of the first conductivity type; and
a second source/drain feature over the main body of the first well in the cross-sectional view, wherein the second source/drain feature is of the second conductivity type, wherein the second source/drain feature is generally aligned with the first source/drain feature along a second direction perpendicular to the first direction from the top view.