CPC H01L 27/0207 (2013.01) [H01L 27/0924 (2013.01); H01L 29/0847 (2013.01)] | 20 Claims |
1. A semiconductor structure, comprising:
a substrate having a first well of a first conductivity type and a second well of a second conductivity type that is opposite of the first conductivity type, wherein from a top view, the first well includes a first edge that is generally straight and extends along a first direction and a second edge that is opposite to the first edge and extends generally along the first direction, wherein the second edge has multiple turns, resulting in a protruding section of the first well that protrudes out of a main body of the first well and a recessed section of the first well that recedes into the main body of the first well;
a first source/drain feature over the protruding section of the first well in a cross-sectional view, wherein the first source/drain feature is of the first conductivity type; and
a second source/drain feature over the main body of the first well in the cross-sectional view, wherein the second source/drain feature is of the second conductivity type, wherein the second source/drain feature is generally aligned with the first source/drain feature along a second direction perpendicular to the first direction from the top view.
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