US 11,721,666 B2
Isolation bonding film for semiconductor packages and methods of forming the same
Ming-Tsu Chung, Hsinchu (TW); Ku-Feng Yang, Baoshan Township (TW); Yung-Chi Lin, Su-Lin (TW); Wen-Chih Chiou, Zhunan Township (TW); and Chen-Hua Yu, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Aug. 23, 2021, as Appl. No. 17/408,662.
Application 17/408,662 is a division of application No. 16/456,678, filed on Jun. 28, 2019, granted, now 11,101,240, issued on Aug. 24, 2021.
Prior Publication US 2021/0384158 A1, Dec. 9, 2021
Int. Cl. H01L 25/065 (2023.01); H01L 23/48 (2006.01); H01L 23/00 (2006.01); H01L 25/00 (2006.01); H01L 21/683 (2006.01); H01L 21/82 (2006.01)
CPC H01L 25/0652 (2013.01) [H01L 21/6836 (2013.01); H01L 21/82 (2013.01); H01L 23/481 (2013.01); H01L 24/08 (2013.01); H01L 24/80 (2013.01); H01L 25/50 (2013.01); H01L 2221/68327 (2013.01); H01L 2224/08146 (2013.01); H01L 2224/80895 (2013.01); H01L 2224/80896 (2013.01); H01L 2225/06524 (2013.01); H01L 2225/06541 (2013.01); H01L 2225/06568 (2013.01); H01L 2225/06582 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method comprising:
bonding a first die to a package substrate, the first die comprising first vias disposed in a first substrate of the first die;
after bonding the first die to the package substrate, etching a backside of the first die such that top surfaces of the first vias extend above top surfaces of the first substrate;
conformally depositing a first dielectric film over the package substrate and the first die, the first dielectric film extending along sidewalls and the top surfaces of the first vias;
planarizing the first dielectric film to expose the top surfaces of the first vias; and
bonding a second die to the first die, the second die being bonded to the first dielectric film and the first vias.
 
8. A method comprising:
bonding a first die to a package substrate, the first die comprising a via extending through a substrate;
depositing a first dielectric film extending along a top surface of the package substrate, a top surface of the substrate, a top surface of the via, and sidewalls of the via;
removing the first dielectric film from the top surface of the via;
bonding a second die to the first dielectric film and the via; and
encapsulating the first die, the first dielectric film, and the second die with an encapsulant, wherein the encapsulant contacts the first dielectric film and a sidewall of the second die.
 
15. A method comprising:
providing a first die comprising a first via in a first substrate;
thinning a backside of the first substrate to expose the first via;
bonding a front-side of the first die opposite the backside of the first substrate to a package substrate;
depositing a first dielectric layer over the first die and the package substrate;
planarizing the first dielectric layer such that a top surface of the first dielectric layer is level with a top surface of the first via; and
encapsulating the first die and the first dielectric layer.