US 11,721,657 B2
Wafer level chip scale package having varying thicknesses
Jing-En Luan, Singapore (SG)
Assigned to STMICROELECTRONICS PTE LTD, Singapore (SG)
Filed by STMICROELECTRONICS PTE LTD, Singapore (SG)
Filed on May 14, 2020, as Appl. No. 16/874,392.
Claims priority of provisional application 62/861,923, filed on Jun. 14, 2019.
Prior Publication US 2020/0395324 A1, Dec. 17, 2020
Int. Cl. H01L 23/00 (2006.01); H01L 23/498 (2006.01)
CPC H01L 24/14 (2013.01) [H01L 23/49816 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A device, comprising:
a die of semiconductor material including:
a central region and a peripheral region around the central region;
a first surface of the semiconductor material at the central region having a first surface area;
a second surface of the semiconductor material and of the peripheral region having a second surface area greater than the first surface area and surrounding the first surface;
a plurality of inclined surfaces of the semiconductor material extending from the first surface to the second surface;
a third surface of the semiconductor material opposite to the first surface, the second surface, and the plurality of inclined surfaces;
a first portion having a rectangular shape, the first portion being at the central region, and the first portion having a first thickness that extends from the third surface to the first surface, the first portion including a plurality of edges from which the plurality of inclined surfaces extend;
a second portion extending from the first portion, the second portion having a varying thickness that extends from the plurality of inclined surfaces to the third surface; and
a third portion extending from the second portion, the third portion being spaced from the first portion by the second portion, the third portion having a second thickness that extends from the second surface to the third surface, the second thickness is less than the first thickness, the third portion surrounds the first portion and the second portion and is at the peripheral region, the third portion includes a plurality of first sidewalls, and each first sidewall of the plurality of first sidewalls of the third portion is at an angle to each edge of the plurality of edges of the first portion.