CPC H01L 23/528 (2013.01) [H01L 21/76895 (2013.01); H01L 23/535 (2013.01); H01L 29/42392 (2013.01); H01L 29/456 (2013.01); H01L 29/78696 (2013.01)] | 20 Claims |
1. A semiconductor structure comprising:
a backside insulating matrix layer:
a nanostructure overlying the backside insulating matrix layer and including at least one semiconductor channel plate, a gate structure, a first active region, and a second active region;
an epitaxial semiconductor material portion laterally spaced from the semiconductor nanostructure and overlying the backside insulating matrix layer;
a backside metal interconnect structure located on a bottom surface of the backside insulating matrix layer; and
an electrically conductive path connecting the first active region and the backside metal interconnect structure.
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