US 11,721,594 B2
Dual channel gate all around transistor device and fabrication methods thereof
Wei-Sheng Yun, Taipei (TW); Chih-Hao Wang, Hsinchu County (TW); Jui-Chien Huang, Hsinchu (TW); Kuo-Cheng Chiang, Hsinchu County (TW); Chih-Chao Chou, Hsinchu (TW); Chun-Hsiung Lin, Hsinchu County (TW); and Pei-Hsun Wang, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD, Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu (TW)
Filed on Jun. 8, 2022, as Appl. No. 17/805,962.
Application 17/805,962 is a continuation of application No. 17/114,147, filed on Dec. 7, 2020, granted, now 11,532,521.
Application 17/114,147 is a continuation in part of application No. 16/737,591, filed on Jan. 8, 2020, granted, now 11,251,090, issued on Feb. 15, 2022.
Application 16/737,591 is a continuation of application No. 16/366,946, filed on Mar. 27, 2019, granted, now 10,804,162, issued on Oct. 13, 2020.
Claims priority of provisional application 62/737,269, filed on Sep. 27, 2018.
Prior Publication US 2022/0301943 A1, Sep. 22, 2022
Int. Cl. H01L 21/8238 (2006.01); H01L 29/06 (2006.01); H01L 21/02 (2006.01); H01L 21/324 (2006.01); H01L 29/423 (2006.01); H01L 27/092 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 21/306 (2006.01); H01L 21/311 (2006.01); H01L 21/027 (2006.01); H01L 21/762 (2006.01); H01L 29/66 (2006.01)
CPC H01L 21/823821 (2013.01) [H01L 21/02532 (2013.01); H01L 21/30604 (2013.01); H01L 21/324 (2013.01); H01L 21/823807 (2013.01); H01L 21/823828 (2013.01); H01L 27/0924 (2013.01); H01L 29/0673 (2013.01); H01L 29/0847 (2013.01); H01L 29/1037 (2013.01); H01L 29/42392 (2013.01); H01L 21/0274 (2013.01); H01L 21/31116 (2013.01); H01L 21/76224 (2013.01); H01L 21/823864 (2013.01); H01L 21/823878 (2013.01); H01L 29/6653 (2013.01); H01L 29/66545 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor structure, comprising:
a substrate;
a fin disposed on the substrate, the fin including a source region, a drain region, and a channel region disposed between the source and drain regions, the channel region comprising a plurality of channels vertically stacked over one another, the channels comprising germanium distributed therein;
a gate stack engaging the channel region of the fin; and
gate spacers disposed between the gate stack and the source and drain regions of the fin,
wherein each channel of the channels includes a middle section wrapped around by the gate stack and two end sections engaged by the gate spacers, wherein a concentration of germanium in the middle section is higher than a concentration of germanium in the two end sections, and wherein the middle section further includes a core portion and an outer portion surrounding the core portion and has a germanium concentration profile from the core portion to the outer portion.