CPC H01L 21/823481 (2013.01) [H01L 21/823431 (2013.01); H01L 27/0886 (2013.01); H01L 29/0649 (2013.01)] | 5 Claims |
1. A semiconductor device, comprising:
a single diffusion break (SDB) structure dividing a fin-shaped structure into a first portion and a second portion; and
an isolation structure on the SDB structure, wherein the isolation structure comprises a T-shape, a bottom surface of the isolation structure is lower than a top surface of the fin-shaped structure, and the isolation structure further comprising:
a cap layer on the SDB structure, wherein the cap layer is made of a dielectric material; and
a dielectric layer on the cap layer.
|