CPC H01L 21/823475 (2013.01) [H01L 21/7682 (2013.01); H01L 21/76805 (2013.01); H01L 21/76895 (2013.01); H01L 21/823431 (2013.01); H01L 21/823437 (2013.01); H01L 29/66545 (2013.01)] | 20 Claims |
1. A method comprising:
depositing an inter-layer dielectric over a first metal gate and a second metal gate, the first metal gate disposed over a first fin and a second fin, the second fin being spaced apart from the first fin by a first distance in a top-down view, the second metal gate disposed over a third fin and a fourth fin, the fourth fin being spaced apart from the third fin by a second distance in the top-down view, the second distance greater than the first distance;
forming a first gate contact extending through the inter-layer dielectric to contact the first metal gate, the first gate contact being spaced apart from the first fin by a third distance in the top-down view; and
forming a second gate contact extending through the inter-layer dielectric to contact the second metal gate, the second gate contact being spaced apart from the third fin by a fourth distance in the top-down view, the fourth distance less than the third distance.
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