US 11,721,590 B2
Semiconductor device and method
Shih-Chieh Wu, Hsinchu (TW); Pang-Chi Wu, Hsinchu (TW); Kuo-Yi Chao, Hsinchu (TW); Mei-Yun Wang, Chu-Pei (TW); Hsien-Huang Liao, Hsinchu (TW); Tung-Heng Hsieh, ZhudongTown (TW); and Bao-Ru Young, Zhubei (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Jul. 12, 2022, as Appl. No. 17/862,628.
Application 17/862,628 is a continuation of application No. 17/169,809, filed on Feb. 8, 2021, granted, now 11,393,724.
Application 17/169,809 is a continuation of application No. 16/567,053, filed on Sep. 11, 2019, granted, now 10,957,604, issued on Mar. 23, 2021.
Claims priority of provisional application 62/753,456, filed on Oct. 31, 2018.
Prior Publication US 2022/0344215 A1, Oct. 27, 2022
Int. Cl. H01L 21/82 (2006.01); H01L 21/76 (2006.01); H01L 21/8234 (2006.01); H01L 29/66 (2006.01); H01L 21/768 (2006.01)
CPC H01L 21/823475 (2013.01) [H01L 21/7682 (2013.01); H01L 21/76805 (2013.01); H01L 21/76895 (2013.01); H01L 21/823431 (2013.01); H01L 21/823437 (2013.01); H01L 29/66545 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method comprising:
depositing an inter-layer dielectric over a first metal gate and a second metal gate, the first metal gate disposed over a first fin and a second fin, the second fin being spaced apart from the first fin by a first distance in a top-down view, the second metal gate disposed over a third fin and a fourth fin, the fourth fin being spaced apart from the third fin by a second distance in the top-down view, the second distance greater than the first distance;
forming a first gate contact extending through the inter-layer dielectric to contact the first metal gate, the first gate contact being spaced apart from the first fin by a third distance in the top-down view; and
forming a second gate contact extending through the inter-layer dielectric to contact the second metal gate, the second gate contact being spaced apart from the third fin by a fourth distance in the top-down view, the fourth distance less than the third distance.