US 11,721,589 B2
Fin-type field-effect transistor device having substrate with heavy doped and light doped regions, and method of fabricating the same
Chun-Hung Chen, Hsinchu (TW); Chih-Hung Hsieh, Hsin-Chu (TW); and Jhon-Jhy Liaw, Hsinchu County (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Nov. 26, 2021, as Appl. No. 17/535,712.
Application 17/535,712 is a continuation of application No. 16/824,655, filed on Mar. 19, 2020, granted, now 11,195,760.
Application 16/824,655 is a continuation of application No. 16/147,896, filed on Oct. 1, 2018, granted, now 10,629,490, issued on Apr. 21, 2020.
Claims priority of provisional application 62/712,212, filed on Jul. 31, 2018.
Prior Publication US 2022/0084888 A1, Mar. 17, 2022
Int. Cl. H01L 27/088 (2006.01); H01L 21/8234 (2006.01); H01L 29/06 (2006.01); H01L 29/36 (2006.01); H01L 29/78 (2006.01); H01L 29/10 (2006.01); H01L 21/762 (2006.01); H01L 29/66 (2006.01); H01L 29/165 (2006.01); H10B 10/00 (2023.01); H01L 21/02 (2006.01); H01L 21/308 (2006.01); H01L 21/027 (2006.01); H01L 21/3105 (2006.01); H01L 21/306 (2006.01)
CPC H01L 21/823431 (2013.01) [H01L 21/76224 (2013.01); H01L 21/823412 (2013.01); H01L 21/823481 (2013.01); H01L 27/0886 (2013.01); H01L 29/0653 (2013.01); H01L 29/1095 (2013.01); H01L 29/165 (2013.01); H01L 29/36 (2013.01); H01L 29/66636 (2013.01); H01L 29/7848 (2013.01); H01L 29/7853 (2013.01); H10B 10/12 (2023.02); H01L 21/0217 (2013.01); H01L 21/0223 (2013.01); H01L 21/02057 (2013.01); H01L 21/0257 (2013.01); H01L 21/0262 (2013.01); H01L 21/0274 (2013.01); H01L 21/02164 (2013.01); H01L 21/02255 (2013.01); H01L 21/02271 (2013.01); H01L 21/3081 (2013.01); H01L 21/3086 (2013.01); H01L 21/30604 (2013.01); H01L 21/31053 (2013.01); H01L 29/66545 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A structure, comprising:
a substrate comprising a plurality of doped blocks;
a fin structure disposed on each of the plurality of doped blocks, wherein the fin structure comprises an active channel region and a body region, and an interface exist in between the active channel region and the body region;
dielectric strips physically separating the plurality of doped blocks from one another; and
insulators disposed on the plurality of doped blocks and located in between the body region of the fin structure and the dielectric strips;
strained material portions disposed on the body region of the fin structure, and located on two sides of the active channel region, wherein the strained material portions are in direct contact with the dielectric strips, and a plurality of cavities exist in between the strained material portions and the dielectric strips.