US 11,721,588 B2
Semiconductor structure with cutting depth control and method for fabricating the same
Chih-Chang Hung, Hsinchu (TW); Shu-Yuan Ku, Hsinchu County (TW); I-Wei Yang, Yilan County (TW); Yi-Hsuan Hsiao, Taipei (TW); Ming-Ching Chang, Hsinchu (TW); and Ryan Chia-Jen Chen, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed on Jun. 7, 2021, as Appl. No. 17/341,163.
Application 17/341,163 is a division of application No. 15/876,175, filed on Jan. 21, 2018, granted, now 11,031,290.
Claims priority of provisional application 62/593,055, filed on Nov. 30, 2017.
Prior Publication US 2021/0296181 A1, Sep. 23, 2021
Int. Cl. H01L 27/088 (2006.01); H01L 29/78 (2006.01); H01L 21/762 (2006.01); H01L 21/8234 (2006.01); H01L 29/66 (2006.01)
CPC H01L 21/823431 (2013.01) [H01L 21/76224 (2013.01); H01L 27/0886 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 21/823481 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor structure, comprising:
first and second fins extending upwardly from a semiconductor substrate;
a shallow trench isolation structure laterally surrounding lower portions of the first and second fins;
a first gate structure extending across an upper portion of the first fin;
a second gate structure extending across an upper portion of the second fin;
first source/drain epitaxial structures on the first fin and on opposite sides of the first gate structure;
second source/drain epitaxial structures on the second fin and on opposite sides of the second gate structure;
a separation plug interposing the first and second gate structures and extending along a lengthwise direction of the first fin; and
an isolation material cupping an underside of a portion of the separation plug between one of the first source/drain epitaxial structures and one of the second source/drain epitaxial structures, wherein a bottom position of the separation plug is lower than a bottom position of the isolation material.