CPC H01L 21/823431 (2013.01) [H01L 21/76224 (2013.01); H01L 27/0886 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 21/823481 (2013.01)] | 20 Claims |
1. A semiconductor structure, comprising:
first and second fins extending upwardly from a semiconductor substrate;
a shallow trench isolation structure laterally surrounding lower portions of the first and second fins;
a first gate structure extending across an upper portion of the first fin;
a second gate structure extending across an upper portion of the second fin;
first source/drain epitaxial structures on the first fin and on opposite sides of the first gate structure;
second source/drain epitaxial structures on the second fin and on opposite sides of the second gate structure;
a separation plug interposing the first and second gate structures and extending along a lengthwise direction of the first fin; and
an isolation material cupping an underside of a portion of the separation plug between one of the first source/drain epitaxial structures and one of the second source/drain epitaxial structures, wherein a bottom position of the separation plug is lower than a bottom position of the isolation material.
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