	US 11,721,565 B2
	Multi-chamber apparatus
Yong Jun Choi, Suwon-si (KR); Seok Hoon Kim, Suwon-si (KR); Young-Hoo Kim, Suwon-si (KR); In Gi Kim, Suwon-si (KR); Sung Hyun Park, Suwon-si (KR); Seung Min Shin, Suwon-si (KR); Kun Tack Lee, Suwon-si (KR); Jinwoo Lee, Suwon-si (KR); Hun Jae Jang, Suwon-si (KR); and Ji Hoon Cha, Suwon-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Nov. 21, 2019, as Appl. No. 16/690,498.
Claims priority of application No. 10-2019-0048933 (KR), filed on Apr. 26, 2019.
Prior Publication US 2020/0343113 A1, Oct. 29, 2020
Int. Cl. H01L 21/67 (2006.01); H01L 21/687 (2006.01); B08B 3/08 (2006.01)

CPC H01L 21/67167 (2013.01) [B08B 3/08 (2013.01); H01L 21/67034 (2013.01); H01L 21/67051 (2013.01); H01L 21/67063 (2013.01); H01L 21/68707 (2013.01)]

8 Claims

1. A method for manufacturing a semiconductor, the method comprising:

moving a wafer in a high etch rate chamber of a multi-chamber apparatus;

etching silicon nitride of the wafer with a first phosphoric acid solution in the high etch rate chamber;

moving the wafer from the high etch rate chamber to a rinse chamber of the multi-chamber apparatus;

cleaning the wafer with an ammonia mixed solution in the rinse chamber;

moving the wafer from the rinse chamber to a supercritical drying chamber of the multi-chamber apparatus; and

drying the wafer with a supercritical fluid in the supercritical drying chamber,

wherein:

a process time of the high etch rate chamber is a first time,

a process time of the rinse chamber is a second time,

a process time of the supercritical drying chamber is a third time,

a ratio of the first time, the second time, and the third time is 5:1:3, and

a temperature of the ammonia mixed solution is 50° C. to 150° C.