US 11,721,553 B2
Formation method of semiconductor device using mask layer and sidewall spacer material layer to form trenches
Jisong Jin, Shanghai (CN)
Assigned to Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai (CN); and Semiconductor Manufacturing International (Beijing) Corporation, Beijing (CN)
Filed by Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai (CN); and Semiconductor Manufacturing International (Beijing) Corporation, Beijing (CN)
Filed on Mar. 2, 2021, as Appl. No. 17/249,422.
Claims priority of application No. 202010148879.X (CN), filed on Mar. 5, 2020.
Prior Publication US 2021/0280423 A1, Sep. 9, 2021
Int. Cl. H01L 21/033 (2006.01)
CPC H01L 21/0338 (2013.01) [H01L 21/0332 (2013.01); H01L 21/0335 (2013.01); H01L 21/0337 (2013.01)] 12 Claims
OG exemplary drawing
 
1. A method for forming a semiconductor device, comprising:
providing a to-be-etched layer including a plurality of first regions and a plurality of second regions, the plurality of first regions and the plurality of second regions being alternatively arranged, and a first region of the plurality of first regions adjoins a corresponding second region of the plurality of second regions;
forming a first mask layer on the to-be-etched layer;
forming a patterned core layer on the first mask layer of the first region;
forming a sidewall spacer material layer on a top surface and a sidewall surface of the core layer and a surface of the first mask layer;
removing the sidewall spacer material layer on the top surface of the patterned core layer;
removing the patterned core layer and the first mask layer at a bottom of the patterned core layer to form a first trench in the first mask layer of the first region;
removing the sidewall spacer material layer on the surface of the first mask layer of a second region;
forming a first patterned layer exposing the first mask layer of the second region; and
using the first patterned layer as a mask to remove the first mask layer of the second region to form a second trench in the first mask layer of the second region.