CPC H01L 21/02653 (2013.01) [H01L 21/02381 (2013.01); H01L 21/02392 (2013.01); H01L 21/02543 (2013.01); H01L 21/02546 (2013.01); H01L 21/0243 (2013.01); H01L 21/02164 (2013.01); H01L 21/02208 (2013.01); H01L 21/02211 (2013.01); H01L 21/02282 (2013.01); H01L 21/02433 (2013.01); H01L 21/02634 (2013.01)] | 15 Claims |
1. A method comprising:
a depositing of a second layer comprising silica onto a first layer comprising a Group III element and a substrate having a surface; and
exposing the second layer to a precursor comprising a Group V element, resulting in the transforming of the first layer to a solid layer comprising a III-V alloy, wherein:
the depositing is performed by a sol-gel method,
the exposing converts at least a portion of the first layer to a liquid,
at least one of the precursor or the Group V element diffuse through the silica, and the silica retains the liquified first layer, enabling at least one of the precursor or the Group V element to diffuse into the liquid, resulting in the forming of the III-V alloy.
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