US 11,721,548 B2
Method for forming semiconductor layer
Ryo Nakao, Tokyo (JP); and Tomonari Sato, Tokyo (JP)
Assigned to Nippon Telegraph and Telephone Corporation, Tokyo (JP)
Appl. No. 17/299,524
Filed by Nippon Telegraph and Telephone Corporation, Tokyo (JP)
PCT Filed Nov. 19, 2019, PCT No. PCT/JP2019/045212
§ 371(c)(1), (2) Date Jun. 3, 2021,
PCT Pub. No. WO2020/116148, PCT Pub. Date Jun. 11, 2020.
Claims priority of application No. 2018-227044 (JP), filed on Dec. 4, 2018.
Prior Publication US 2022/0028689 A1, Jan. 27, 2022
Int. Cl. H01L 21/02 (2006.01); H01L 21/306 (2006.01)
CPC H01L 21/02546 (2013.01) [H01L 21/02178 (2013.01); H01L 21/02241 (2013.01); H01L 21/02488 (2013.01); H01L 21/02502 (2013.01); H01L 21/02505 (2013.01); H01L 21/30608 (2013.01); H01L 21/02381 (2013.01); H01L 21/02461 (2013.01); H01L 21/02463 (2013.01)] 7 Claims
OG exemplary drawing
 
1. A method for forming a semiconductor layer, the method comprising:
(i) crystal-growing, on a substrate, a first semiconductor layer, the first semiconductor layer having a lattice constant in a planar direction of a surface of the substrate which is different from a lattice constant of the substrate in the planar direction of the surface of the substrate;
(ii) crystal-growing a second semiconductor layer on the first semiconductor layer;
(iii) selectively dissolving the second semiconductor layer to form a recess at a dislocation portion of the second semiconductor layer, the recess reaching the first semiconductor layer;
(iv) oxidizing the first semiconductor layer through the recess and forming an insulating film covering a lower surface of the second semiconductor layer; and
(v) crystal-regrowing the second semiconductor layer after forming the insulating film.