US 11,721,545 B2
Method of using dual frequency RF power in a process chamber
Anup Kumar Singh, Santa Clara, CA (US); Rick Kustra, San Jose, CA (US); Vinayak Vishwanath Hassan, San Francisco, CA (US); Bhaskar Kumar, Santa Clara, CA (US); Krishna Nittala, San Jose, CA (US); Pramit Manna, Santa Clara, CA (US); Kaushik Comandoor Alayavalli, Sunnyvale, CA (US); and Ganesh Balasubramanian, Fremont, CA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Sep. 28, 2020, as Appl. No. 17/35,107.
Prior Publication US 2022/0102141 A1, Mar. 31, 2022
Int. Cl. H01L 21/02 (2006.01); H01L 21/033 (2006.01); H01J 37/32 (2006.01); B08B 7/00 (2006.01); C23C 16/505 (2006.01); C23C 16/26 (2006.01); C23C 16/44 (2006.01)
CPC H01L 21/02274 (2013.01) [B08B 7/0035 (2013.01); C23C 16/26 (2013.01); C23C 16/4405 (2013.01); C23C 16/505 (2013.01); H01J 37/3244 (2013.01); H01J 37/32082 (2013.01); H01J 37/32862 (2013.01); H01L 21/02115 (2013.01); H01L 21/0332 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A method, comprising:
actuating a substrate support with a substrate thereon from a first position to a second position in a processing volume of a chamber, the second position being about 5 inches to 6 inches from a chamber lid;
introducing a gas to the processing volume of the chamber;
providing a first radiofrequency (RF) power having a first frequency of about 40 MHz or greater to a lid of the chamber;
providing a second RF power having a second frequency to a bias electrode disposed in the substrate support within the processing volume, wherein the second frequency is about 10 MHz to about 40 MHz; and
depositing a film on the substrate and the
chamber lid, wherein the film comprises a thickness of about 3,000 angstroms or greater.