CPC H01L 21/02274 (2013.01) [B08B 7/0035 (2013.01); C23C 16/26 (2013.01); C23C 16/4405 (2013.01); C23C 16/505 (2013.01); H01J 37/3244 (2013.01); H01J 37/32082 (2013.01); H01J 37/32862 (2013.01); H01L 21/02115 (2013.01); H01L 21/0332 (2013.01)] | 16 Claims |
1. A method, comprising:
actuating a substrate support with a substrate thereon from a first position to a second position in a processing volume of a chamber, the second position being about 5 inches to 6 inches from a chamber lid;
introducing a gas to the processing volume of the chamber;
providing a first radiofrequency (RF) power having a first frequency of about 40 MHz or greater to a lid of the chamber;
providing a second RF power having a second frequency to a bias electrode disposed in the substrate support within the processing volume, wherein the second frequency is about 10 MHz to about 40 MHz; and
depositing a film on the substrate and the
chamber lid, wherein the film comprises a thickness of about 3,000 angstroms or greater.
|