US 11,721,544 B2
Cut metal gate process for reducing transistor spacing
Ming-Chang Wen, Kaohsiung (TW); Chang-Yun Chang, Taipei (TW); Hsien-Chin Lin, Hsinchu (TW); and Hung-Kai Chen, Taichung (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Jan. 31, 2022, as Appl. No. 17/588,883.
Application 17/588,883 is a continuation of application No. 16/854,627, filed on Apr. 21, 2020, granted, now 11,239,072.
Application 16/854,627 is a continuation of application No. 16/421,532, filed on May 24, 2019, granted, now 10,651,030, issued on May 12, 2020.
Application 16/421,532 is a continuation of application No. 15/827,709, filed on Nov. 30, 2017, granted, now 10,319,581, issued on Jun. 11, 2019.
Prior Publication US 2022/0157595 A1, May 19, 2022
Int. Cl. H01L 21/02 (2006.01); H01L 21/3215 (2006.01); H01L 21/3105 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 21/8258 (2006.01); H01L 21/8238 (2006.01); H01L 21/762 (2006.01); H01L 27/02 (2006.01); H10B 10/00 (2023.01)
CPC H01L 21/0214 (2013.01) [H01L 21/02164 (2013.01); H01L 21/31056 (2013.01); H01L 21/32155 (2013.01); H01L 21/8258 (2013.01); H01L 21/823814 (2013.01); H01L 29/0649 (2013.01); H01L 29/66545 (2013.01); H01L 29/785 (2013.01); H01L 29/7848 (2013.01); H01L 21/76224 (2013.01); H01L 27/0207 (2013.01); H10B 10/12 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A semiconductor structure, comprising:
a substrate;
an isolation structure over the substrate;
a first fin extending from the substrate and through the isolation structure;
a first source/drain structure over the first fin;
a contact etch stop layer over the isolation structure and contacting a first side face of the first source/drain structure; and
a first dielectric structure contacting a second side face of the first source/drain structure, wherein the first side face and the second side face are on opposite sides of the first fin in a cross-sectional view cut along a widthwise direction of the first fin, and the first dielectric structure extends higher than the first source/drain structure.